DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93AW
NPN 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
1995 Sep 18
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, 2 columns
BFR93AW
3
1
Top view
Marking code:
R2.
2
MBC870
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power
gain
up to T
s
= 93
C;
note 1
I
C
= 30 mA; V
CE
= 5 V
I
C
= 0; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
C
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 30 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
C
F
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
noise figure
junction temperature
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz;
s
=
opt
open emitter
open base
CONDITIONS
40
4
MIN.
90
0.6
5
13
8
1.5
TYP.
MAX.
15
12
35
300
150
pF
GHz
dB
dB
dB
C
UNIT
V
V
mA
mW
1995 Sep 18
2
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
up to T
s
= 93
C;
see Fig.2; note 1
open base
open collector
CONDITION
open emitter
MIN.
65
BFR93AW
MAX.
15
12
2
35
300
+150
150
UNIT
V
V
V
mA
mW
C
C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITION
up to T
s
= 93
C;
note 1
VALUE
190
UNIT
K/W
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
400
P tot
(mW)
300
MLB540
200
100
0
0
50
100
150
200
T s ( o C)
Fig.2 Power derating curve.
1995 Sep 18
3
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
C
(unless otherwise specified).
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 30 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V;
f = 1 MHz
I
C
= 0; V
CE
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V;
f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V;
f = 1 GHz; T
amb
= 25
C
I
C
= 30 mA; V
CE
= 8 V;
f = 2 GHz; T
amb
= 25
C
F
noise figure
I
C
= 5 mA; V
CE
= 8 V;
f = 1 GHz;
s
=
opt
I
C
= 5 mA; V
CE
= 8 V;
f = 2 GHz;
s
=
opt
Note
40
4
MIN.
90
0.7
2.3
0.6
5
13
8
1.5
2.1
TYP.
BFR93AW
MAX.
50
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
s
21 2
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero and G
UM
=
10 log -------------------------------------------------------- dB.
1
–
s
11 2
1
–
s
22 2
1995 Sep 18
4
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
handbook, halfpage
120
MCD087
MBG203
1
Cre
(pF)
0.8
h FE
80
0.6
0.4
40
0.2
0
0
10
20
IC (mA)
30
0
0
4
8
12
VCB (V)
16
V
CE
= 5 V.
I
C
= 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
6
fT
(GHz)
4
MBG204
2
0
1
10
IC (mA)
10
2
V
CE
= 5 V; f = 500 MHz; T
amb
= 25
C.
Fig.5
Transition frequency as a function
of collector current; typical values.
1995 Sep 18
5
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