Semiconductor
HCTS390MS
Radiation Hardened
Dual Decade Ripple Counter
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
CP0N 1 1
MR 1 2
Q0 1 3
CP1N 1 4
Q1 1 5
16 VCC
15 CP0N 2
14 MR 2
13 Q0 2
12 CP1N 2
11 Q1 2
10 Q2 2
9 Q3 2
September 1995
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C
Q2 1 6
to
+125
o
C
Q3 1 7
GND 8
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = 2.0V Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
CP0N 1
MR 1
Q0 1
CP1N 1
Q1 1
Q2 1
Q3 1
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
CP0N 2
MR 2
Q0 2
CP1N 2
Q1 2
Q2 2
Q3 2
Description
The Harris HCTS390MS is a Radiation Hardened dual
decade ripple counter.
The HCTS390MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family .
The HCTS390MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
HCTS390DMSR
HCTS390KMSR
HCTS390D/Sample
HCTS390K/Sample
HCTS390HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Harris Class S Equivalent
Harris Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
©
Harris Corporation 1995
Spec Number
File Number
662
518634
2476.2
DB NA
HCTS390MS
Functional Diagram
4(12)
nCP1
1(15)
nCP0
2(14)
nMR
φ
R
Q
φ
R
Q
φ
R
Q
φ
R
Q
3(13)
nQ0
5(11)
nQ1
6(10)
nQ2
7(9)
nQ3
TRUTH TABLE
INPUTS
CP
MR
L
L
H
H = High Level
L = Low Logic Level
X = Immaterial
= Low-to-High
= High-to-Low
H
ACTION
No Change
Count
All Qs Low
Spec Number
663
518634
Specifications HCTS390MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
o
C/W
29
o
C/W
o
C Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . . . .500ns Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . . . 2.0V to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
(Standard Driver)
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V (Standard Driver)
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Current
(Source)
IOH
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V (Note 2)
7, 8A, 8B
1. All voltages referenced to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
664
518634
Specifications HCTS390MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
CP1Nn to Q1n
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
VCC = 4.5V
9
10, 11
CP1Nn to Q2n
VCC = 4.5V
9
10, 11
CP1Nn to Q3n
VCC = 4.5V
9
10, 11
MR to QNn
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
2
2
MAX
22
27
29
35
34
41
29
35
23
29
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
CP0N to Q0n
SYMBOL
TPHL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1, 2, 3
1, 2, 3
CIN
VCC = 5.0V, f = 1MHz
1, 2, 3
1, 2, 3
Output Transition
Time
Max Operating
Frequency
Pulse Width CP0Nn,
CP1Nn
Pulse Width Reset
TTHL
TTLH
FMAX
VCC = 4.5V
1, 2, 3
1, 2, 3
VCC = 4.5V
1, 2, 3
1, 2, 3
TW
VCC = 4.5V
1, 2, 3
1, 2, 3
TW
VCC = 4.5V
1, 2, 3
1, 2, 3
Removal Time
Reset
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
2. Applies to DIC packaged devices.
3. Applies to Flatpack packaged devices.
TREM
VCC = 4.5V
1, 2, 3
1, 2, 3
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C
+25
o
C
+125
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
-
-
15
22
13
20
15
22
MAX
50
56
10
10
15
22
27
18
-
-
-
-
-
-
UNITS
pF
pF
pF
pF
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
ns
Spec Number
665
518634
Specifications HCTS390MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.80V, IOL = 50µA
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.80V, IOL = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 2.25V, VIL = 0.80V,
(Note 3)
VCC = 4.5V
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
4.0
MAX
0.75
-
UNITS
mA
mA
Output Current
(Source)
Output Voltage Low
IOH
+25
o
C
-4.0
-
mA
VOL
+25
o
C
-
0.1
V
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
-
-
V
Input Leakage Current
Noise Immunity
Functional Test
CP0Nn to Q0n
IIN
FN
+25
o
C
+25
o
C
±5
-
µA
-
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
+25
o
C
2
27
ns
CP1Nn to Q1n
VCC = 4.5V
+25
o
C
2
35
ns
CP1Nn to Q2n
VCC = 4.5V
+25
o
C
2
41
ns
CP1Nn to Q3n
VCC = 4.5V
+25
o
C
2
35
ns
MR to Qn
NOTES:
VCC = 4.5V
+25
o
C
2
29
ns
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
12µA
-15% of 0 Hour
Spec Number
666
518634
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