Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | International Rectifier （ Infineon ） |
| 零件包装代码 | D2PAK |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 13 A |
| 集电极-发射极最大电压 | 600 V |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | MATTE TIN OVER NICKEL |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | MOTOR CONTROL |
| 晶体管元件材料 | SILICON |
| 标称断开时间 (toff) | 258 ns |
| 标称接通时间 (ton) | 45 ns |
| Base Number Matches | 1 |
| IRGS6B60KDTRLPBF | IRGB6B60KD | IRGS6B60KD | IRGSL6B60KD | IRGS6B60KDTRRPBF | |
|---|---|---|---|---|---|
| 描述 | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | 13 A, 600 V, N-CHANNEL IGBT, TO-220AB | 13 A, 600 V, N-CHANNEL IGBT, TO-220AB | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 |
| 是否Rohs认证 | 符合 | 不符合 | 不符合 | 不符合 | 符合 |
| 厂商名称 | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| 零件包装代码 | D2PAK | TO-220AB | D2PAK | TO-262 | D2PAK |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 13 A | 13 A | 13 A | 13 A | 13 A |
| 集电极-发射极最大电压 | 600 V | 600 V | 600 V | 600 V | 600 V |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 |
| JESD-609代码 | e3 | e0 | e0 | e0 | e3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 2 | 3 | 2 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | 225 | 225 | 225 | 260 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | YES | NO | YES |
| 端子面层 | MATTE TIN OVER NICKEL | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | MATTE TIN OVER NICKEL |
| 端子形式 | GULL WING | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 |
| 晶体管应用 | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称断开时间 (toff) | 258 ns | 258 ns | 258 ns | 258 ns | 258 ns |
| 标称接通时间 (ton) | 45 ns | 45 ns | 45 ns | 45 ns | 45 ns |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| 湿度敏感等级 | 1 | - | 1 | 1 | 1 |
| 最大降落时间（tf） | - | 27 ns | 27 ns | 27 ns | - |
| 门极发射器阈值电压最大值 | - | 5.5 V | 5.5 V | 5.5 V | - |
| 门极-发射极最大电压 | - | 20 V | 20 V | 20 V | - |
| 最大功率耗散 (Abs) | - | 90 W | 90 W | 90 W | - |
| 最大上升时间（tr） | - | 26 ns | 26 ns | 26 ns | - |
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