Central
TM
PROCESS
CP191
Semiconductor Corp.
Small Signal Transistor
NPN - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GROSS DIE PER 4 INCH WAFER
41,690
PRINCIPAL DEVICE TYPES
2N2219A
2N2222A
CMPT2222A
CMST2222A
CXT2222A
CZT2222A
MD2219A
PN2222A
BACKSIDE COLLECTOR
EPITAXIAL PLANAR
16.5 x 16.5 MILS
9.0 MILS
3.5 x 4.3 MILS
3.5 x 4.3 MILS
Al - 30,000Å
Au - 18,000Å
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (14-August 2006)