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Datasheet> 器件分类 > 存储> 存储> K4R571669D-FCN90

K4R571669D-FCN90: 产品描述Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92; 产品类别存储存储; 文件大小312KB，共20页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/

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K4R571669D-FCN90概述

Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92

K4R571669D-FCN90规格参数

参数名称	属性值
厂商名称	SAMSUNG(三星)
零件包装代码	BGA
包装说明	TFBGA,
针数	92
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	BLOCK ORIENTED PROTOCOL
其他特性	SELF CONTAINED REFRESH
JESD-30 代码	R-PBGA-B92
长度	15.1 mm
内存密度	268435456 bit
内存集成电路类型	RAMBUS DRAM
内存宽度	16
功能数量	1
端口数量	1
端子数量	92
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
组织	16MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态	Not Qualified
座面最大高度	1.08 mm
自我刷新	YES
最大供电电压 (Vsup)	2.63 V
最小供电电压 (Vsup)	2.37 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
宽度	9.3 mm
Base Number Matches	1

K4R571669D-FCN90相似产品对比

	K4R571669D-FCN90	K4R571669D-FCT90	K4R881869D-FCT90	K4R571669D-FCM90	K4R571669D-FCM80	K4R881869D-FCM80	K4R881869D-FCK80	K4R881869D-FCM90	K4R881869D-FCN90	K4R571669D-FCK80
描述	Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,
针数	92	92	92	92	92	92	92	92	92	92
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL
其他特性	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH
JESD-30 代码	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92
长度	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm
内存密度	268435456 bit	268435456 bit	301989888 bit	268435456 bit	268435456 bit	301989888 bit	301989888 bit	301989888 bit	301989888 bit	268435456 bit
内存集成电路类型	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM
内存宽度	16	16	18	16	16	18	18	18	18	16
功能数量	1	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1	1
端子数量	92	92	92	92	92	92	92	92	92	92
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
组织	16MX16	16MX16	16MX18	16MX16	16MX16	16MX18	16MX18	16MX18	16MX18	16MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V
最小供电电压 (Vsup)	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
宽度	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm
厂商名称	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	-	-	-	-	SAMSUNG(三星)
Base Number Matches	1	1	1	1	1	1	1	1	1	-

K4R571669D-FCN90

K4R571669D-FCN90概述

K4R571669D-FCN90规格参数

K4R571669D-FCN90相似产品对比

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