Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92
参数名称 | 属性值 |
零件包装代码 | BGA |
包装说明 | TFBGA, |
针数 | 92 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | BLOCK ORIENTED PROTOCOL |
其他特性 | SELF CONTAINED REFRESH |
JESD-30 代码 | R-PBGA-B92 |
长度 | 15.1 mm |
内存密度 | 301989888 bit |
内存集成电路类型 | RAMBUS DRAM |
内存宽度 | 18 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 92 |
字数 | 16777216 words |
字数代码 | 16000000 |
工作模式 | SYNCHRONOUS |
组织 | 16MX18 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TFBGA |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
认证状态 | Not Qualified |
座面最大高度 | 1.08 mm |
自我刷新 | YES |
最大供电电压 (Vsup) | 2.63 V |
最小供电电压 (Vsup) | 2.37 V |
标称供电电压 (Vsup) | 2.5 V |
表面贴装 | YES |
技术 | CMOS |
端子形式 | BALL |
端子节距 | 0.8 mm |
端子位置 | BOTTOM |
宽度 | 9.3 mm |
Base Number Matches | 1 |
K4R881869D-FCK80 | K4R571669D-FCN90 | K4R571669D-FCT90 | K4R881869D-FCT90 | K4R571669D-FCM90 | K4R571669D-FCM80 | K4R881869D-FCM80 | K4R881869D-FCM90 | K4R881869D-FCN90 | K4R571669D-FCK80 | |
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描述 | Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92 | Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92 | Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92 | Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92 | Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92 | Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92 | Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92 | Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92 | Rambus DRAM, 16MX18, CMOS, PBGA92, WBGA-92 | Rambus DRAM, 16MX16, CMOS, PBGA92, WBGA-92 |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, |
针数 | 92 | 92 | 92 | 92 | 92 | 92 | 92 | 92 | 92 | 92 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL |
其他特性 | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH |
JESD-30 代码 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 | R-PBGA-B92 |
长度 | 15.1 mm | 15.1 mm | 15.1 mm | 15.1 mm | 15.1 mm | 15.1 mm | 15.1 mm | 15.1 mm | 15.1 mm | 15.1 mm |
内存密度 | 301989888 bit | 268435456 bit | 268435456 bit | 301989888 bit | 268435456 bit | 268435456 bit | 301989888 bit | 301989888 bit | 301989888 bit | 268435456 bit |
内存集成电路类型 | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM | RAMBUS DRAM |
内存宽度 | 18 | 16 | 16 | 18 | 16 | 16 | 18 | 18 | 18 | 16 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 92 | 92 | 92 | 92 | 92 | 92 | 92 | 92 | 92 | 92 |
字数 | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
字数代码 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
组织 | 16MX18 | 16MX16 | 16MX16 | 16MX18 | 16MX16 | 16MX16 | 16MX18 | 16MX18 | 16MX18 | 16MX16 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.08 mm | 1.08 mm | 1.08 mm | 1.08 mm | 1.08 mm | 1.08 mm | 1.08 mm | 1.08 mm | 1.08 mm | 1.08 mm |
自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V |
最小供电电压 (Vsup) | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V |
标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
宽度 | 9.3 mm | 9.3 mm | 9.3 mm | 9.3 mm | 9.3 mm | 9.3 mm | 9.3 mm | 9.3 mm | 9.3 mm | 9.3 mm |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
厂商名称 | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | - | - | - | SAMSUNG(三星) |
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