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5962F9862201V9A

产品描述AC SERIES, TRIPLE 3-INPUT AND GATE, UUC16, DIE-16
产品类别逻辑    逻辑   
文件大小49KB,共2页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 选型对比 全文预览

5962F9862201V9A概述

AC SERIES, TRIPLE 3-INPUT AND GATE, UUC16, DIE-16

5962F9862201V9A规格参数

参数名称属性值
零件包装代码DIE
包装说明DIE,
针数16
Reach Compliance Codeunknown
系列AC
JESD-30 代码R-XUUC-N16
JESD-609代码e0
逻辑集成电路类型AND GATE
功能数量3
输入次数3
端子数量16
封装主体材料UNSPECIFIED
封装代码DIE
封装形状RECTANGULAR
封装形式UNCASED CHIP
传播延迟(tpd)12 ns
认证状态Not Qualified
筛选级别MIL-PRF-38535 Class V
表面贴装YES
技术CMOS
端子面层TIN LEAD
端子形式NO LEAD
端子位置UPPER
总剂量300k Rad(Si) V
Base Number Matches1

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ACS11MS
Data Sheet
November 1998
File Number
4543
Radiation Hardened Triple 3-Input AND
Gate
The Radiation Hardened ACS11MS is a Triple 3-Input AND
Gate. When all three inputs to one of the gates are at a
HIGH level, the corresponding Y output will be HIGH. A LOW
level on any input will cause the output for that gate to be
LOW. All inputs are buffered and the outputs are designed
for balanced propagation delay and transition times.
The ACS11MS is fabricated on a CMOS Silicon on Sapphire
(SOS) process, which provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment. These devices offer significant
power reduction and faster performance when compared to
ALSTTL types.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS11MS are
contained in SMD 5962-98622. A “hot-link” is provided
on our homepage with instructions for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 10
5
RAD (Si)
- SEU Immunity . . . . . . . . . . . . . <1 x 10
-10
Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm
2
)
• Input Logic Levels . . . . V
IL
= (0.3)(V
CC
), V
IH
= (0.7)(V
CC
)
• Output Current . . . . . . . . . . . . . . . . . . . . . . . .
±8mA
(Min)
• Quiescent Supply Current . . . . . . . . . . . . . . 100µA (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . . 12ns (Max)
Applications
• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs
Ordering Information
ORDERING NUMBER
5962F9862201VCC
ACS11D/SAMPLE-03
5962F9862201VXC
ACS11K/SAMPLE-03
5962F9862201V9A
INTERNAL MKT. NUMBER
ACS11DMSR-03
ACS11D/SAMPLE-03
ACS11KMSR-03
ACS11K/SAMPLE-03
ACS11HMSR-03
TEMP. RANGE (
o
C)
-55 to 125
25
-55 to 125
25
25
PACKAGE
14 Ld SBDIP
14 Ld SBDIP
14 Ld Flatpack
14 Ld Flatpack
Die
DESIGNATOR
CDIP2-T14
CDIP2-T14
CDFP4-F14
CDFP4-F14
N/A
Pinouts
ACS11MS
(SBDIP)
TOP VIEW
A1
B1
A2
A2 3
B2 4
C2 5
Y2 6
GND 7
12 Y1
11 C3
10 B3
9 A3
8 Y3
B2
C2
Y2
GND
ACS11MS
(FLATPACK)
TOP VIEW
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
CC
C1
Y1
C3
B3
A3
Y3
A1 1
B1 2
14 V
CC
13 C1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

5962F9862201V9A相似产品对比

5962F9862201V9A 5962F9862201VCC 5962F9862201VXC
描述 AC SERIES, TRIPLE 3-INPUT AND GATE, UUC16, DIE-16 AC SERIES, TRIPLE 3-INPUT AND GATE, CDIP14 AC SERIES, TRIPLE 3-INPUT AND GATE, CDFP14
零件包装代码 DIE DIP DFP
包装说明 DIE, SIDE BRAZED, CERAMIC, DIP-14 DFP, FL14,.3
针数 16 14 14
Reach Compliance Code unknown not_compliant not_compliant
系列 AC AC AC
JESD-30 代码 R-XUUC-N16 R-CDIP-T14 R-CDFP-F14
JESD-609代码 e0 e0 e0
逻辑集成电路类型 AND GATE AND GATE AND GATE
功能数量 3 3 3
输入次数 3 3 3
端子数量 16 14 14
封装主体材料 UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装代码 DIE DIP DFP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 UNCASED CHIP IN-LINE FLATPACK
传播延迟(tpd) 12 ns 12 ns 12 ns
认证状态 Not Qualified Not Qualified Not Qualified
筛选级别 MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class V
表面贴装 YES NO YES
技术 CMOS CMOS CMOS
端子面层 TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 NO LEAD THROUGH-HOLE FLAT
端子位置 UPPER DUAL DUAL
总剂量 300k Rad(Si) V 300k Rad(Si) V 300k Rad(Si) V
Base Number Matches 1 1 1
是否Rohs认证 - 不符合 不符合
负载电容(CL) - 50 pF 50 pF
最大I(ol) - 0.012 A 0.012 A
最高工作温度 - 125 °C 125 °C
最低工作温度 - -55 °C -55 °C
封装等效代码 - DIP14,.3 FL14,.3
电源 - 5 V 5 V
Prop。Delay @ Nom-Sup - 12 ns 12 ns
施密特触发器 - NO NO
座面最大高度 - 5.08 mm 2.92 mm
标称供电电压 (Vsup) - 5 V 5 V
温度等级 - MILITARY MILITARY
端子节距 - 2.54 mm 1.27 mm
宽度 - 7.62 mm 6.285 mm

 
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