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256MD-40-800

产品描述Rambus DRAM, 16MX16, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54
产品类别存储    存储   
文件大小3MB,共72页
制造商Rambus Inc
下载文档 详细参数 选型对比 全文预览

256MD-40-800概述

Rambus DRAM, 16MX16, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54

256MD-40-800规格参数

参数名称属性值
零件包装代码BGA
包装说明,
针数54
Reach Compliance Codeunknown
ECCN代码EAR99
访问模式BLOCK ORIENTED PROTOCOL
JESD-30 代码R-PBGA-B54
内存密度268435456 bit
内存集成电路类型RAMBUS DRAM
内存宽度16
功能数量1
端口数量1
端子数量54
字数16777216 words
字数代码16000000
工作模式SYNCHRONOUS
组织16MX16
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式GRID ARRAY
认证状态Not Qualified
最大供电电压 (Vsup)2.63 V
最小供电电压 (Vsup)2.37 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
端子形式BALL
端子位置BOTTOM
Base Number Matches1

256MD-40-800相似产品对比

256MD-40-800 256MD-45-711 256MD-45-800 256MD-50-711 256MD-53-600 288MD-40-800 288MD-50-711 288MD-45-711 288MD-45-800 288MD-53-600
描述 Rambus DRAM, 16MX16, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54 Rambus DRAM, 16MX16, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54 Rambus DRAM, 16MX16, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54 Rambus DRAM, 16MX16, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54 Rambus DRAM, 16MX16, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54 Rambus DRAM, 16MX18, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54 Rambus DRAM, 16MX18, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54 Rambus DRAM, 16MX18, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54 Rambus DRAM, 16MX18, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54 Rambus DRAM, 16MX18, CMOS, PBGA54, 9 X 8 MM, CENTER BONDED, MICRO, BGA-54
零件包装代码 BGA BGA BGA BGA BGA BGA BGA BGA BGA BGA
针数 54 54 54 54 54 54 54 54 54 54
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL
JESD-30 代码 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54
内存密度 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 301989888 bit 301989888 bit 301989888 bit 301989888 bit 301989888 bit
内存集成电路类型 RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM
内存宽度 16 16 16 16 16 18 18 18 18 18
功能数量 1 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1 1
端子数量 54 54 54 54 54 54 54 54 54 54
字数 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
字数代码 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
组织 16MX16 16MX16 16MX16 16MX16 16MX16 16MX18 16MX18 16MX18 16MX18 16MX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大供电电压 (Vsup) 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V
最小供电电压 (Vsup) 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Base Number Matches 1 1 1 1 1 1 1 1 1 1

 
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