DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC635; BC637; BC639
NPN medium power transistors
Product specification
Supersedes data of 1997 Mar 12
1999 Apr 23
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Driver stages of audio/video amplifiers.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC636, BC638 and BC640.
PINNING
PIN
1
2
3
BC635; BC637; BC639
DESCRIPTION
base
collector
emitter
1
handbook, halfpage
2
3
2
1
3
MAM259
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BC635
BC637
BC639
V
CEO
collector-emitter voltage
BC635
BC637
BC639
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
45
60
80
5
1
1.5
200
0.83
+150
150
+150
V
V
V
V
A
A
mA
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−
45
60
100
V
V
V
MIN.
MAX.
UNIT
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN medium power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
PARAMETER
thermal resistance from junction to ambient
BC635; BC637; BC639
CONDITIONS
note 1
VALUE
150
UNIT
K/W
MIN.
−
−
−
40
63
25
63
100
MAX.
100
10
100
−
250
−
160
250
500
1
−
1.6
UNIT
nA
µA
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 2 V; see Fig.2
I
C
= 5 mA
I
C
= 150 mA
I
C
= 500 mA
DC current gain
BC639-10
BC635-16; BC637-16; BC639-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; V
CE
= 2 V
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V; see Fig.2
−
−
100
−
mV
V
MHz
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN medium power transistors
BC635; BC637; BC639
handbook, full pagewidth
160
MBH729
hFE
120
VCE = 2 V
80
40
0
10
−1
1
10
10
2
IC (mA)
10
3
Fig.2 DC current gain; typIcal values.
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN medium power transistors
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BC635; BC637; BC639
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 23
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
