BC516
BC516
PNP Darlington Transistor
• This device is designed for applications reguiring extremely high
current gain at currents to 1mA.
• Sourced from process 61.
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
- Continuous
T
A
= 25°C
Value
30
40
10
1
625
-55 ~ +150
Units
V
V
V
A
mW
°C
Operating and Storage Junction Temperature Range
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product (2)
Test Condition
I
C
= 2mA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 30V, I
E
= 0
I
C
= 20mA, V
CE
= 2V
I
C
= 100mA, I
B
= 0.1mA
I
C
= 10mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V, f = 100MHz
200
30,00
0
1
1.4
V
V
MH
Z
Min.
30
40
10
100
Typ.
Max.
Units
V
V
V
nA
NOTES:
1. Pulse Test Pulse Width
≤
2%
2. f
T
= Ih
fe
I · f
test
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Max.
200
83.3
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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Advance Information
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Formative or In
Design
First Production
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This datasheet contains the design specifications for
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Rev. I1
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