HCS195MS
September 1995
Radiation Hardened Inverting
8-Bit Parallel-Input/Serial Output Shift Register
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
MR
J
K
D0
D1
1
2
3
4
5
6
7
8
16 VCC
15 Q0
14 Q1
13 Q2
12 Q3
11 Q3
10 CP
9 PE
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Standard Outputs - 10 LSTTL Loads
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
D2
D3
GND
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
MR
J
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
Q0
Q1
Q2
Q3
Q3
CP
PE
Description
The Intersil HCS195MS is a Radiation Hardened 8-Bit Paral-
lel-In/Serial-Out Shift Register with complementary serial
outputs and an asynchronous parallel load input.
The HCS195MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS195MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
K
D0
D1
D2
D3
GND
Ordering Information
PART NUMBER
HCS195DMSR
HCS195KMSR
HCS195D/Sample
HCS195K/Sample
HCS195HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
280
518760
3385.1
HCS195MS
Functional Diagram
D0
D1
D2
D3
PE
CP
P
J
TG
N
CL
DP PL
DS Q
MR
P
K
TG
N
CL
DP PL
DS Q
MR
CL
DP PL
DS Q
MR
CL
DP PL
DS Q
MR
MR
Q0
Q1
Q2
Q3
Q3
TRUTH TABLE
INPUTS
MR
L
H
H
H
H
H
CP
X
PE
X
h
h
h
h
l
J
X
h
l
h
l
X
K
X
h
l
l
h
X
Dn
X
X
X
X
X
dn
Q0
L
H
L
q0
q0
d0
Q1
L
q0
q0
q0
q0
dl
OUTPUTS
Q2
L
ql
ql
ql
ql
d2
Q3
L
q2
q2
q2
q2
d3
Q3
H
q3
q3
q3
q3
d3
Dn or Qn = referenced input (or output) one set-up time prior to clock
l or h = level one set-up time prior to clock
= positive clock
Spec Number
281
518760
Specifications HCS195MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All voltage reference to VSS)
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
o
C/W
29
o
C/W
o
C Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . . .10ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Current
(Source)
IOH
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
7, 8A, 8B
NOTES:
1. All voltages reference to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
282
518760
Specifications HCS195MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
9
10, 11
9
10, 11
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
MAX
31
37
34
42
32
39
32
39
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Propagation Delay
(CP - Qn)
Propagation Delay
(CP - Qn)
Propagation Delay
(MR - Q0-3)
Propagation Delay
(MR - Q3)
NOTES:
SYMBOL
TPHL1
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V, VIH = 4.5V
VIL = 0
VCC = 4.5V, VIH = 4.5V
VIL = 0
VCC = 4.5V, VIH = 4.5V
VIL = 0
VCC = 4.5V, VIH = 4.5V
VIL = 0
TPLH1
TPHL2
TPLH2
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTE 1)
CONDITIONS
VCC = 5.0V, VIH = 5.0V, VIL = 0.0V,
f = 1MHz
VCC = 5.0V, VIH = 5.0V, VIL = 0.0V,
f = 1MHz
VCC = 5.0V, VIH = 5.0V, VIL = 0.0V,
f = 1MHz
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
TSU
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
Hold Time
TH
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
MR to CP Removal
Time
Recovery Time
PL to CP
Maximum Clock
Frequency
Output Transition Time
TREM
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
TREC
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
FMAX
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
TTHL
TTLH
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
16
24
20
20
3
3
16
24
20
30
30
20
1
1
MAX
90
120
10
10
20
20
-
-
-
-
-
-
-
-
-
-
-
-
15
22
UNITS
pF
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MHz
MHz
ns
ns
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CIN
Output Capacitance
COUT
Pulse Width Time
(CP or MR)
Setup Time
TW
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
283
518760
Specifications HCS195MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Supply Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
SYMBOL
ICC
IOL
IOH
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0
VCC = VIH = 4.5V,
VOUT = VCC - 0.4V, VIL = 0
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50µA
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
VCC = 4.5V, VIH = 4.5V, VIL = 0V
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
MIN
-
4.0
-4.0
MAX
0.75
-
-
UNITS
mA
mA
mA
VOL
+25
o
C
-
0.1
V
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
-
-
V
Input Leakage Current
Noise Immunity
Functional Test
Propagation Delay
(CP - Qn)
Propagation Delay
(CP - Qn)
Propagation Delay
(MR - Q0-3)
Propagation Delay
(MR - Q3)
IIN
FN
+25
o
C
+25
o
C
±5
-
µA
-
TPHL1
+25
o
C
2
37
ns
TPLH1
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
42
ns
TPHL2
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
39
ns
TPLH2
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
39
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
12µA
-15% of 0 Hour
Spec Number
284
518760
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