5962R9576701VXC概述

D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDFP16

5962R9576701VXC规格参数

参数名称	属性值
包装说明	,
Reach Compliance Code	unknown
其他特性	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY
系列	HCT
JESD-30 代码	R-CDFP-F16
JESD-609代码	e4
负载电容（CL）	50 pF
逻辑集成电路类型	D LATCH
位数	2
功能数量	2
端子数量	16
最高工作温度	125 °C
最低工作温度	-55 °C
输出极性	COMPLEMENTARY
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	FLATPACK
传播延迟（tpd）	34 ns
认证状态	Not Qualified
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	GOLD
端子形式	FLAT
端子位置	DUAL
总剂量	100k Rad(Si) V
触发器类型	HIGH LEVEL
Base Number Matches	1

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5962R9576701VXC相似产品对比

	5962R9576701VXC	5962R9576701VXX	5962R9576701VEC	5962R9576701VEX	HCTS75KMSH	HCTS75DMSH
描述	D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDFP16	D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDFP16	D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDIP16	D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDIP16	D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDFP16	D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDIP16
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY
系列	HCT	HCT	HCT	HCT	HCT	HCT
JESD-30 代码	R-CDFP-F16	R-CDFP-F16	R-CDIP-T16	R-CDIP-T16	R-CDFP-F16	R-CDIP-T16
逻辑集成电路类型	D LATCH	D LATCH	D LATCH	D LATCH	D LATCH	D LATCH
位数	2	2	2	2	2	2
功能数量	2	2	2	2	2	2
端子数量	16	16	16	16	16	16
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
输出极性	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK	FLATPACK	IN-LINE	IN-LINE	FLATPACK	IN-LINE
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	NO	NO	YES	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	FLAT	FLAT	THROUGH-HOLE	THROUGH-HOLE	FLAT	THROUGH-HOLE
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
触发器类型	HIGH LEVEL	HIGH LEVEL	HIGH LEVEL	HIGH LEVEL	HIGH LEVEL	HIGH LEVEL
负载电容（CL）	50 pF	-	50 pF	-	50 pF	50 pF
传播延迟（tpd）	34 ns	34 ns	34 ns	34 ns	-	-
总剂量	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	-	-
Base Number Matches	1	1	1	1	1	-

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