D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDIP16
| 参数名称 | 属性值 |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| 其他特性 | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY |
| 系列 | HCT |
| JESD-30 代码 | R-CDIP-T16 |
| JESD-609代码 | e4 |
| 负载电容（CL） | 50 pF |
| 逻辑集成电路类型 | D LATCH |
| 位数 | 2 |
| 功能数量 | 2 |
| 端子数量 | 16 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出极性 | COMPLEMENTARY |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 传播延迟（tpd） | 34 ns |
| 认证状态 | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | GOLD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 总剂量 | 100k Rad(Si) V |
| 触发器类型 | HIGH LEVEL |
| Base Number Matches | 1 |
| 5962R9576701VEC | 5962R9576701VXX | 5962R9576701VXC | 5962R9576701VEX | HCTS75KMSH | HCTS75DMSH | |
|---|---|---|---|---|---|---|
| 描述 | D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDIP16 | D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDFP16 | D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDFP16 | D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDIP16 | D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDFP16 | D Latch, HCT Series, 2-Func, High Level Triggered, 2-Bit, Complementary Output, CMOS, CDIP16 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 其他特性 | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY |
| 系列 | HCT | HCT | HCT | HCT | HCT | HCT |
| JESD-30 代码 | R-CDIP-T16 | R-CDFP-F16 | R-CDFP-F16 | R-CDIP-T16 | R-CDFP-F16 | R-CDIP-T16 |
| 逻辑集成电路类型 | D LATCH | D LATCH | D LATCH | D LATCH | D LATCH | D LATCH |
| 位数 | 2 | 2 | 2 | 2 | 2 | 2 |
| 功能数量 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 16 | 16 | 16 | 16 | 16 | 16 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 输出极性 | COMPLEMENTARY | COMPLEMENTARY | COMPLEMENTARY | COMPLEMENTARY | COMPLEMENTARY | COMPLEMENTARY |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | FLATPACK | FLATPACK | IN-LINE | FLATPACK | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | NO | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | FLAT | FLAT | THROUGH-HOLE | FLAT | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 触发器类型 | HIGH LEVEL | HIGH LEVEL | HIGH LEVEL | HIGH LEVEL | HIGH LEVEL | HIGH LEVEL |
| 负载电容（CL） | 50 pF | - | 50 pF | - | 50 pF | 50 pF |
| 传播延迟（tpd） | 34 ns | 34 ns | 34 ns | 34 ns | - | - |
| 总剂量 | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | - | - |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
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