MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers
September 2009
MCT5201M, MCT5210M, MCT5211M
Low Input Current Phototransistor Optocouplers
Features
■
High CTR
CE(SAT)
comparable to Darlingtons
■
CTR guaranteed 0°C to 70°C
■
High common mode transient rejection 5kV/µs
■
Data rates up to 150kbits/s (NRZ)
■
Underwriters Laboratory (UL) recognized,
Description
The MCT52XXM series consists of a high-efficiency
AlGaAs, infrared emitting diode, coupled with an NPN
phototransistor in a six pin dual-in-line package.
The MCT52XXM is well suited for CMOS to LSTT/TTL
interfaces, offering 250% CTR
CE(SAT)
with 1mA of LED
input current. When an LED input current of 1.6mA is
supplied data rates to 20K bits/s are possible.
The MCT52XXM can easily interface LSTTL to LSTTL/
TTL, and with use of an external base to emitter resistor
data rates of 100K bits/s can be achieved.
file #E90700, volume 2
■
IEC60747-5-2 approved (ordering option V)
Applications
■
CMOS to CMOS/LSTTL logic isolation
■
LSTTL to CMOS/LSTTL logic isolation
■
RS-232 line receiver
■
Telephone ring detector
■
AC line voltage sensing
■
Switching power supply
Schematic
Package Outlines
ANODE 1
6 BASE
CATHODE 2
5 COL
3
4 EMITTER
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
I
C
P
D
Continuous Collector Current
Detector Power Dissipation
Derate Linearly from 25°C
Continuous Forward Current
Reverse Input Voltage
Storage Temperature
Operating Temperature
Lead Solder Temperature
Parameters
Value
-55 to +150
-40 to +100
260 for 10 sec
260
3.5
50
6
3.0
75
1.0
150
150
2.0
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mA
mW
mW/°C
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
2
MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Individual Component Characteristics
Symbol
EMITTER
V
F
∆
V
F
∆
T
A
V
R
C
J
BV
CEO
BV
CBO
BV
EBO
I
CER
C
CE
C
CB
C
EB
Input Forward Voltage
Forward Voltage Temp. Coefficient
Reverse Voltage
Junction Capacitance
I
F
= 5mA
I
F
= 2mA
I
R
= 10µA
V
F
= 0V, f = 1.0MHz
All
All
All
All
All
All
All
All
All
All
All
30
30
5
6
18
100
120
10
1
10
80
15
100
1.25
-1.75
1.5
V
mV/°C
V
pF
V
V
V
nA
pF
pF
pF
Parameters
Test Conditions
Device
Min.
Typ.* Max. Units
DETECTOR
Collector-Emitter Breakdown Voltage I
C
= 1.0mA, I
F
= 0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Dark Current
Capacitance, Collector to Emitter
Capacitance, Collector to Base
Capacitance, Emitter to Base
I
C
= 10µA, I
F
= 0
I
E
= 10µA, I
F
= 0
V
CE
= 10V, I
F
= 0,
R
BE
= 1M
Ω
V
CE
= 0, f = 1MHz
V
CB
= 0, f = 1MHz
V
EB
= 0, f = 1MHz
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
CM
H
Characteristic
Input-Output Isolation
Voltage
(10)
Isolation Resistance
(10)
Isolation Capacitance
(9)
Common Mode Transient
Rejection – Output HIGH
Test Conditions
f = 60Hz, t = 1 sec.
V
I-O
= 500 VDC, T
A
= 25°C
V
I-O
= 0, f = 1 MHz
V
CM
= 50 V
P-P1
, R
L
= 750
Ω
,
I
F
= 0
V
CM
= 50 V
P-P
, R
L
= 1K
Ω
,
I
F
= 0
V
CM
= 50 V
P-P1
, R
L
= 750
Ω
,
I
F
=1.6mA
V
CM
= 50 V
P-P1
, R
L
= 1K
Ω
,
I
F
= 5mA
Device
All
All
All
MCT5210M/11M
MCT5201M
MCT5210M/11M
MCT5201M
Min. Typ.* Max.
7500
10
11
0.4
5000
0.6
Units
Vac(peak)
Ω
pF
V/µs
CM
L
Common Mode Transient
Rejection – Output LOW
5000
V/µs
*All typical T
A
= 25°C
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
3
MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers
Electrical Characteristics
(Continued)
(T
A
= 25°C unless otherwise specified)
Transfer Characteristics
Symbol
Characteristics
Test Conditions
I
F
= 5mA, V
CE
= 0.4V
I
F
= 3.0mA, V
CE
= 0.4V
I
F
= 1.6mA, V
CE
= 0.4V
I
F
= 1.0mA, V
CE
= 0.4V
CTR
(CE)
Current Transfer Ratio I
F
= 3.0mA, V
CE
= 5.0V
(Collector to Emitter)
(1)
I = 1.6mA, V = 5.0V
F
CE
I
F
= 1.0mA, V
CE
= 5.0V
CTR
(CB)
Current Transfer Ratio
Collector to Base
(2)
I
F
= 5mA, V
CB
= 4.3V
I
F
= 3.0mA, V
CE
= 4.3V
I
F
= 1.6mA, V
CE
= 4.3V
I
F
= 1.0mA, V
CE
= 4.3V
V
CE(SAT)
Saturation Voltage
I
F
= 5mA, I
CE
= 6mA
I
F
= 3.0mA, I
CE
= 1.8mA
I
F
= 1.6mA, I
CE
= 1.6mA
AC CHARACTERISTICS
T
PHL
Propagation Delay
HIGH-to-LOW
(3)
R
L
= 330
Ω,
R
BE
=
∞
R
L
= 3.3 kΩ, R
BE
= 39kΩ
R
L
= 750
Ω,
R
BE
=
∞
R
L
= 4.7 kΩ, R
BE
= 91kΩ
R
L
= 1.5 kΩ, R
BE
=
∞
I
F
= 3.0mA,
V
CC
= 5.0V
I
F
= 1.6mA,
V
CC
= 5.0V
MCT5210M
MCT5211M
10
7
14
15
17
24
MCT5201M
MCT5210M
MCT5211M
3
0.4
8
2.5
11
7
16
MCT5201M
MCT5201M
MCT5201M
MCT5201M
MCT5201M
12
1.1
2.5
10
16
13
15
20
13
30
µs
µs
µs
µs
30
µs
µs
MCT5201M
MCT5210M
MCT5211M
MCT5201M
MCT5210M
MCT5211M
MCT5210M
MCT5211M
Device
MCT5201M
MCT5210M
MCT5211M
Min. Typ.* Max. Units
120
60
100
75
70
150
110
0.28
0.2
0.3
0.25
0.4
0.4
0.4
V
%
%
%
DC CHARACTERISTICS
CTR
CE(SAT)
Saturated Current
Transfer Ratio
(1)
(Collector to Emitter)
I
F
= 1.0mA,
R
L
= 10 kΩ, R
BE
= 160kΩ V
CC
= 5.0V
I
F
= 5mA
V
CE
= 0.4V, V
CC
= 5V,
R
L
= fig. 13, R
BE
= 330kΩ
T
PLH
Propagation Delay
LOW-to-HIGH
(4)
R
L
= 330
Ω,
R
BE
=
∞
R
L
= 3.3 kΩ, R
BE
= 39kΩ
R
L
= 750
Ω,
R
BE
=
∞
R
L
= 4.7 kΩ, R
BE
= 91kΩ
R
L
= 1.5 kΩ, R
BE
=
∞
I
F
= 3.0mA,
V
CC
= 5.0V
I
F
= 1.6mA,
V
CC
= 5.0V
I
F
= 1.0mA,
R
L
= 10 kΩ, R
BE
= 160kΩ V
CC
= 5.0V
I
F
= 5mA
V
CE
= 0.4V, V
CC
= 5V,
R
L
= fig. 13, R
BE
= 330kΩ
t
d
t
r
t
s
t
f
Delay Time
(5)
Rise Time
(6)
Storage Time
(7)
Fall Time
(8)
V
CE
= 0.4V, R
BE
= 330kΩ, I
F
= 5mA
R
L
= 1 kΩ, V
CC
= 5V
V
CE
= 0.4V, R
BE
= 330kΩ, I
F
= 5mA
R
L
= 1 kΩ, V
CC
= 5V
V
CE
= 0.4V, R
BE
= 330 kΩ, I
F
= 5mA
R
L
= 1 kΩ, V
CC
= 5V
V
CE
= 0.4V, R
BE
= 330 kΩ, I
F
= 5mA
R
L
= 1 kΩ, V
CC
= 5V
*All typicals at T
A
= 25°C
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
4
MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers
Notes:
1. DC Current Transfer Ratio (CTR
CE
) is defined as the transistor collector current (I
CE
) divided by the input LED
current (I
F
) x 100%, at a specified voltage between the collector and emitter (V
CE
).
2. The collector base Current Transfer Ratio (CTR
CB
) is defined as the transistor collector base photocurrent(I
CB
)
divided by the input LED current (I
F
) time 100%.
3. Referring to Figure 14 the T
PHL
propagation delay is measured from the 50% point of the rising edge of the data
input pulse to the 1.3V point on the falling edge of the output pulse.
4. Referring to Figure 14 the T
PLH
propagation delay is measured from the 50% point of the falling edge of data input
pulse to the 1.3V point on the rising edge of the output pulse.
5. Delay time (t
d
) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.
6. Rise time (t
r
) is measured from 90% to 10% of Vo falling edge.
7. Storage time (t
s
) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.
8. Fall time (t
f
) is measured from 10% to 90% of Vo rising edge.
9. C
ISO
is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).
10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted
together.
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
5
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