Datasheet> 器件分类 > 分立半导体> 晶体管> RN2702JE(TE85L,F)

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RN2702JE(TE85L,F): 产品描述tran dual CE pnp esv -50v -100a; 产品类别分立半导体晶体管; 文件大小558KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN2702JE(TE85L,F)概述

tran dual CE pnp esv -50v -100a

RN2702JE(TE85L,F)规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Toshiba(东芝)
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	50
元件数量	2
极性/信道类型	PNP
最大功率耗散 (Abs)	0.1 W
表面贴装	YES
晶体管元件材料	SILICON

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RN2701JE~RN2706JE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2701JE, RN2702JE, RN2703JE

RN2704JE, RN2705JE, RN2706JE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5-pin) package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

Complementary to RN1701JE to RN1706JE

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2701JE

RN2702JE

RN2703JE

RN2704JE

RN2705JE

RN2706JE

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

1.BASE1

(B1)

2.EMITTER

(E)

3.BASE2

(B2)

4.COLLECTOR2 (C2)

5.COLLECTOR1 (C1)

JEDEC

JEITA

TOSHIBA

―

2-2P1D

Weight: 0.003 g (typ.)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN2701JE

to 2706JE

RN2701JE

to 2704JE

RN2705JE

RN2706JE

Symbol

CBO

CEO

Rating

−50

−10

EBO

−5

RN2701JE

to 2706JE

(Note 1)

stg

−100

100

150

−55

to 150

°C

Unit

Equivalent Circuit

(top view)

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Start of commercial production

2000-06

2014-03-01

RN2702JE(TE85L,F)相似产品对比

	RN2702JE(TE85L,F)	RN2703JE(TE85L,F)	RN2706JE(TE85L,F)	RN2704JE(TE85L,F)	RN2705JE(TE85L,F)	RN2701JE(TE85L,F)
描述	tran dual CE pnp esv -50v -100a	TRANS 2PNP PREBIAS 0.1W ESV	TRANS 2PNP PREBIAS 0.1W ESV	TRANS 2PNP PREBIAS 0.1W ESV	TRANS 2PNP PREBIAS 0.1W ESV	TRANS 2PNP PREBIAS 0.1W ESV
是否Rohs认证	符合	符合	符合	符合	符合	符合
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
最小直流电流增益 (hFE)	50	70	80	80	80	30
元件数量	2	2	2	2	2	2
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W
表面贴装	YES	YES	YES	YES	YES	YES
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	-	-	Toshiba(东芝)

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