电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

BCW66G_D87Z

产品描述transistor npn 45v 1A sot-23
产品类别分立半导体    晶体管   
文件大小44KB,共4页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准
下载文档 详细参数 全文预览

BCW66G_D87Z概述

transistor npn 45v 1A sot-23

BCW66G_D87Z规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Fairchild
零件包装代码SOT-23
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)1 A
集电极-发射极最大电压45 V
配置SINGLE
最小直流电流增益 (hFE)60
JESD-30 代码R-PDSO-G3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型NPN
最大功率耗散 (Abs)0.35 W
认证状态Not Qualified
表面贴装YES
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz

文档预览

下载PDF文档
BCW66G
BCW66G
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 500mA.
• Sourced from process 13.
3
2
1
SOT-23
Mark: EG
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
45
75
5
1
- 55 ~ +150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= 10µA
I
C
= 10mA
I
E
= 10µA
V
CB
= 45V, I
E
= 0
V
CB
= 45V, I
E
= 0
V
EB
= 4V
V
CE
= 10V, I
C
= 100µA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
I
C
= 100mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1MHz
V
EB
= 0.5V, f = 1MHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
V
CE
= 5V, I
C
= 0.2mA, R
S
= 1kΩ,
f = 1KHz, BW = 200Hz
I
B1
= I
B2
= 15mA
I
C
= 150mA, R
L
= 150Ω
100
10
100
400
50
110
160
60
T
A
= 150°C
Min.
75
45
5
20
20
20
Typ.
Max.
Units
V
V
V
nA
µA
nA
400
0.3
0.7
2
12
80
V
V
pF
pF
MHz
dB
ns
V
CE
(sat)
V
BE
(sat)
C
obo
C
ibo
f
T
NF
t
on
t
off
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Current gain Bandwidth Product
Noise Figure
Turn-On Time
Turn-Off Time
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 888  193  2742  436  338  4  55  20  43  59 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved