IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55
Vishay Semiconductors
Optocoupler, Photodarlington Output (Single, Dual, Quad
Channel)
Single Channel
Features
•
•
•
•
•
•
•
•
125 mA Load Current Rating
Fast Rise Time, 10
µs
Fast Fall Time, 35
µs
Single, Dual and Quad Channel
Solid State Reliability
Standard DIP Packages
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
C
NC
1
2
3
6 B
5 C
4 E
Dual Channel
A
1
C
2
C
3
A
4
8
E
7
C
6
C
5
E
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• BSI IEC60950 IEC60065
• FIMKO
Quad Channel
A 1
C 2
C 3
A 4
A
C
C
5
6
7
16 E
15 C
14 C
13 E
12 E
11 C
10 C
9 E
A 8
Description
The IL30/ IL31/ IL55 single, ILD30/ ILD31/ ILD55
dual, and ILQ30/ ILQ31/ ILQ55 quad are optically
coupled isolators with Gallium Arsenide infrared emit-
ters and silicon photodarlington sensors. Switching
can be achieved while maintaining a high degree of
isolation between driving and load circuits, with no
crosstalk between channels. These optocouplers can
be used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic fields.
The IL30/ IL31/ IL55 are equivalent to MCA230/
MCA231/ MCA255. The ILD30/ ILD31/ ILD55 are
designed to reduce board space requirements in high
density applications.
i179011
e3
Pb
Pb-free
Document Number 83621
Rev. 1.5, 26-Oct-04
www.vishay.com
1
IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55
Vishay Semiconductors
Order Information
Part
IL30
IL31
IL55
ILD30
ILD31
ILD55
ILQ30
ILQ31
ILQ55
IL55-X009
ILD30-X009
ILD31-X007
ILD31-X009
ILD55-X007
ILD55-X009
ILQ30-X009
ILQ55-X007
ILQ55-X009
Remarks
CTR > 100 %, Single Channel DIP-6
CTR > 200 %, Single Channel DIP-6
CTR > 100 %, Single Channel DIP-6
CTR > 100 %, Dual Channel DIP-8
CTR > 200 %, Dual Channel DIP-8
CTR > 100 %, Dual Channel DIP-8
CTR > 100 %, Quad Channel DIP-16
CTR > 200 %, Quad Channel DIP-16
CTR > 100 %, Quad Channel DIP-16
CTR > 100 %, Single Channel SMD-6 (option 9)
CTR > 100 %, Dual Channel SMD-8 (option 9)
CTR > 200 %, Dual Channel SMD-8 (option 7)
CTR > 200 %, Dual Channel SMD-8 (option 9)
CTR > 100 %, Dual Channel SMD-8 (option 7)
CTR > 100 %, Dual Channel SMD-8 (option 9)
CTR > 100 %, Quad Channel SMD-16 (option 9)
CTR > 100 %, Quad Channel SMD-16 (option 7)
CTR > 100 %, Quad Channel SMD-16 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
(each channel)
Parameter
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
V
RM
I
F
P
diss
Value
3.0
60
100
1.33
Unit
V
mA
mW
mW/°C
Output
Parameter
Collector-emitter breakdown voltage
Test condition
Part
IL30
ILD30
ILQ30
IL55
ILD55
ILD55
Symbol
BV
CEO
BV
CEO
BV
CEO
BV
CEO
BV
CEO
BV
CEO
Value
30
30
30
55
55
55
Unit
V
V
V
V
V
V
www.vishay.com
2
Document Number 83621
Rev. 1.5, 26-Oct-04
IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55
Vishay Semiconductors
Parameter
Collector (load) current
Power dissipation
Derate linearly from 25 °C
Test condition
Part
Symbol
I
C
P
diss
Value
125
150
2.0
Unit
mA
mW
mW/°C
Coupler
Parameter
Total package power dissipation
Test condition
Part
IL30
IL31
IL55
ILD30
ILD31
ILD55
ILQ30
ILQ31
ILQ55
Derate linearly from 25 °C
IL30
IL31
IL55
ILD30
ILD31
ILD55
ILQ30
ILQ31
ILQ55
Isolation test voltage
Creepage
Clearance
Comparative tracking index
Storage temperature
Operating temperature
Lead soldering time at 260 °C
T
stg
T
amb
V
ISO
Symbol
P
tot
P
tot
P
tot
P
tot
P
tot
P
tot
P
tot
P
tot
P
tot
Value
250
250
250
400
400
400
500
500
500
3.3
3.3
3.3
5.33
5.33
5.33
6.67
6.67
6.67
5300
≥
7.0
≥
7.0
175
- 55 to + 125
- 55 to + 100
10
°C
°C
sec.
Unit
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
V
RMS
mm
mm
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
GaAs emitter (per channel)
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
I
F
= 20 mA
V
R
= 3.0 V
V
R
= 0 V
Symbol
V
F
I
R
C
O
Min
Typ.
1.25
0.1
25
Max
1.5
10
Unit
V
µA
pF
Document Number 83621
Rev. 1.5, 26-Oct-04
www.vishay.com
3
IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55
Vishay Semiconductors
Output
per channel
Parameter
Collector-emitter breakdown
voltage
Collector-emitter leakage
current
Collector-emitter capacitance
Test condition
I
C
= 100
µA
V
CE
= 10 V, I
F
= 0
V
CE
= 10 V, f = 1.0 MHz
Symbol
BV
CEO
I
CEO
C
CE
Min
30/55
1.0
3.4
100
Typ.
Max
Unit
V
nA
pF
Coupler
Parameter
Collector-emitter saturation
voltage
Isolation test voltage
Isolation resistance
Capacitance (input-output)
R
IO
C
IO
Test condition
I
C
= 50 mA, I
F
= 50 mA
Symbol
V
CEsat
5300
10
12
0.5
Min
Typ.
0.9
Max
1.0
Unit
V
V
RMS
Ω
pF
Current Transfer Ratio
Parameter
Current Transfer Ratio
Test condition
I
F
= 10 mA, V
CE
= 5.0 V
Part
IL30
IL55
ILD30
ILD55
ILQ30
ILQ55
IL31
ILD31
ILQ31
Symbol
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
Min
100
100
100
100
100
100
200
200
200
Typ.
400
400
400
400
400
400
400
400
400
Max
Unit
%
%
%
%
%
%
%
%
%
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4
Document Number 83621
Rev. 1.5, 26-Oct-04
IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55
Vishay Semiconductors
Switching Characteristics
Parameter
Rise time
Fall time
Test condition
V
CC
= 13.5 V, I
F
= 50 mA, R
L
= 100
Ω
V
CC
= 13.5 V, I
F
= 50 mA, R
L
= 100
Ω
Symbol
t
r
t
f
Min
Typ.
10
35
Max
Unit
µs
µs
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
1.4
VF - Forward Voltage - V
10
Ta = –55°C
NIce - Normalized Ice
Normalized to:
IF = 10 mA
Vce = 5 V
Vce = 5 V
1. 3
1.2
1.1
1.0
0.9
0.8
0.7
.1
1
Ta = 25°C
Vce = 1V
.1
Ta = 85°C
.01
1
10
IF - Forward Current - mA
100
iil30_03
.001
.1
10
1
IF - LED Current - mA
100
iil30_01
Figure 1. Forward Voltage vs. Forward Current
Figure 3. Normalized Non-Saturated and Saturated Collector-
Emitter Current vs. LED Current
1.2
NCTRce - Normalized CTRce
Normalized to:
NIcb - Normalized Icb
10
Normalized to:
Vcb = 3.5 V
1
IF = 10 mA
1.0
0.8
0.6
0.4
0.2
Vce = 5 V
IF = 10 mA
Vce = 5 V
.1
.01
Vce =1V
0.0
.1
1
10
100
1000
.001
.1
iil30_04
IF - LED Current - mA
iil30_02
1
10
IF - LED Current - mA
100
Figure 2. Normalized Non-Saturated and Saturated CTR
CE
vs.
LED Current
Figure 4. Normalized Collector-Base Photocurrent vs. LED
Current
Document Number 83621
Rev. 1.5, 26-Oct-04
www.vishay.com
5
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