FH1100
SILICON DIODE
DESCRIPTION:
The
ASI FH1100
is a Silicon Diffused
Hot Carrier Diode.
PACKAGE STYLE DO-7
FEATURES INCLUDE:
•
Q
S
= 1.6 pC Typ.
•
C = 1.0 pF Max. @ f = 890 MHz
•
Hermetic Glass Package
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
T
soldering
10 mA
5.0 V
100 mW @ T
C
= 25 °C
-65 °C to +125 °C
-65 °C to +150 °C
+260 °C for 5 Seconds
CHARACTERISTICS
SYMBOL
V
F
I
R
V
BR
C
T0
NF
Q
S
I
F
= 10 mA
I
F
= 10 mA
V
R
= 1.0 V
T
C
= 25 °C
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
550
1.0
UNITS
mV
µA
V
I
R
= 100
µA
V
R
= 0 V
f = 1.0 MHz
f = 890 MHz
5.0
1.0
10
1.6
pF
dB
pC
A D V A N C E D S E M I C O N D U C T O R, I N C
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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