DDR DRAM, 16MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Microsemi |
零件包装代码 | BGA |
包装说明 | BGA, |
针数 | 219 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | FOUR BANK PAGE BURST |
最长访问时间 | 0.8 ns |
其他特性 | AUTO/SELF REFRESH |
JESD-30 代码 | R-PBGA-B219 |
内存密度 | 1207959552 bit |
内存集成电路类型 | DDR DRAM |
内存宽度 | 72 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 219 |
字数 | 16777216 words |
字数代码 | 16000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 16MX72 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | BGA |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY |
峰值回流温度(摄氏度) | NOT SPECIFIED |
认证状态 | Not Qualified |
自我刷新 | YES |
最大供电电压 (Vsup) | 2.7 V |
最小供电电压 (Vsup) | 2.3 V |
标称供电电压 (Vsup) | 2.5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子形式 | BALL |
端子节距 | 1.27 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
Base Number Matches | 1 |
W3E16M72S-250BI | W3E16M72S-250BC | W3E16M72S-200BM | W3E16M72S-250BM | W3E16M72S-200BC | W3E16M72S-266BC | W3E16M72S-200BI | |
---|---|---|---|---|---|---|---|
描述 | DDR DRAM, 16MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 | DDR DRAM, 16MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 | DDR DRAM, 16MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 | DDR DRAM, 16MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 | DDR DRAM, 16MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 | DDR DRAM, 16MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 | DDR DRAM, 16MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, |
针数 | 219 | 219 | 219 | 219 | 219 | 219 | 219 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 0.8 ns | 0.8 ns | 0.8 ns | 0.8 ns | 0.8 ns | 0.75 ns | 0.8 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 代码 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 |
内存密度 | 1207959552 bit | 1207959552 bit | 1207959552 bit | 1207959552 bit | 1207959552 bit | 1207959552 bit | 1207959552 bit |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 72 | 72 | 72 | 72 | 72 | 72 | 72 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 219 | 219 | 219 | 219 | 219 | 219 | 219 |
字数 | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
字数代码 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 70 °C | 125 °C | 125 °C | 70 °C | 70 °C | 85 °C |
最低工作温度 | -40 °C | - | -55 °C | -55 °C | - | - | -40 °C |
组织 | 16MX72 | 16MX72 | 16MX72 | 16MX72 | 16MX72 | 16MX72 | 16MX72 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
自我刷新 | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
最小供电电压 (Vsup) | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V |
标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL | INDUSTRIAL |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
厂商名称 | Microsemi | Microsemi | - | Microsemi | Microsemi | Microsemi | Microsemi |
Base Number Matches | 1 | 1 | - | 1 | 1 | 1 | 1 |
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