PD - 91701B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM7Z60
100K Rads (Si)
IRHM3Z60
300K Rads (Si)
IRHM4Z60
600K Rads (Si)
IRHM8Z60
1000K Rads (Si)
R
DS(on)
0.014Ω
0.014Ω
0.014Ω
0.014Ω
I
D
35*A
35*A
35*A
35*A
IRHM7Z60
30V, N-CHANNEL
RAD-Hard HEXFET
TECHNOLOGY
™
®
TO-254AA
International Rectifier’s RAD-Hard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
*Current is limited by internal wire diameter
35*
35*
140
250
2.0
±20
500
35
25
0.35
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (Typical )
g
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1
12/20/01
IRHM7Z60
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
30
—
—
2.0
21
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.02
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.014
4.0
—
25
250
100
-100
421
104
115
32
370
177
280
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 35A
➃
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A
➃
VDS= 24V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 15V
VDD =15V, ID = 35A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
C iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7000
4800
1800
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
35*
140
1.5
220
930
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = 35A, VGS = 0V
➃
Tj = 25°C, IF = 35A, di/dt
≤
100A/µs
VDD
≤
50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by the internal wire diameter
Thermal Resistance
Parameter
R thJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.50
0.21 —
—
48
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHM7Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-3)
Static Drain-to-Source
➃
On-State Resistance (TO-254AA)
Diode Forward Voltage
➃
100K Rads(Si)
1
300 - 1000K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 12V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=24V, V
GS
=0V
V
GS
= 12V, I
D
=15A
V
GS
= 12V, I
D
=15A
V
GS
= 0V, IS = 35A
Min
30
2.0
—
—
—
—
—
—
Max
—
4.0
100
-100
25
0.014
0.014
1.5
Min
30
1.25
—
—
—
—
—
—
Max
—
4.5
100
-100
50
0.035
0.035
1.5
1. Part number IRHM7Z60
2. Part numbers IRHM3Z60, IRHM4Z60 and IRHM8Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm²))
36.8
59.9
80.3
Energy
(MeV)
305
345
313
Range
(µm)
@VGS=0V
Br
I
AU
39
32.8
26.5
30
25
22.5
@VGS=-5V
30
25
22.5
VDS(V)
@VGS=-10V
30
20
15
@VGS=-15V
25
15
10
@VGS=-20V
20
10
_
35
30
25
VDS
20
15
10
5
0
0
-5
-10
VGS
-15
-20
Br
I
AU
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHM7Z60
Pre-Irradiation
1000
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
5.0V
5.0V
10
0.1
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
10
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
T
J
= 25
°
C
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 35A
I
D
, Drain-to-Source Current (A)
1.5
100
1.0
0.5
10
5
6
7
8
15V
V DS = 50V
20µs PULSE WIDTH
10
11
9
12
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHM7Z60
15000
V
GS
, Gate-to-Source Voltage (V)
12000
V
GS
=
C
iss
=
C
=
C
C
rss
=
oss
oss
C, Capacitance (pF)
Ciss
9000
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
20
I
D
= 35
A
16
V
DS
= 24V
V
DS
= 15V
12
6000
C
rss
8
3000
4
0
1
10
100
0
0
100
FOR TEST CIRCUIT
SEE FIGURE 13
200
300
400
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
100
100
1ms
1
0.1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
6.0
10
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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