Datasheet> 器件分类 > 分立半导体> 晶体管> IRF5NJZ34PBF

IRF5NJZ34PBF: 产品描述Power Field-Effect Transistor, 22A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN; 产品类别分立半导体晶体管; 文件大小113KB，共7页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/; 标准

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IRF5NJZ34PBF概述

Power Field-Effect Transistor, 22A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN

IRF5NJZ34PBF规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	International Rectifier （ Infineon ）
包装说明	CHIP CARRIER, R-CBCC-N3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
雪崩能效等级（Eas）	43 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	55 V
最大漏极电流 (ID)	22 A
最大漏源导通电阻	0.04 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CBCC-N3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	88 A
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	BOTTOM
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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PD - 94600

HEXFET

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number

IRF5NJZ34

BVDSS

IRF5NJZ34

55V, N-CHANNEL

DS(on)

0.04Ω

22A*

55V

Fifth Generation HEXFET

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

SMD-0.5

Features:

Low R

DS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Package Mounting Surface Temperature

Weight

* Current is limited by package

For footnotes refer to the last page

22*

0.32

±20

4.0

1.8

-55 to 150

Units

W/°C

V/ns

300 (for 5 s)

1.0

www.irf.com

02/07/03

IRF5NJZ34PBF相似产品对比

	IRF5NJZ34PBF	IRF5NJZ34E	IRF5NJZ34ESCX	IRF5NJZ34SCX
描述	Power Field-Effect Transistor, 22A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN	Power Field-Effect Transistor, 22A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN	Power Field-Effect Transistor, 22A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN	Power Field-Effect Transistor, 22A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN
是否无铅	不含铅	含铅	含铅	含铅
是否Rohs认证	符合	不符合	不符合	不符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
包装说明	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3
针数	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	43 mJ	43 mJ	43 mJ	43 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	55 V	60 V	60 V	55 V
最大漏极电流 (ID)	22 A	22 A	22 A	22 A
最大漏源导通电阻	0.04 Ω	0.042 Ω	0.042 Ω	0.04 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CBCC-N3	R-XBCC-N3	R-XBCC-N3	R-XBCC-N3
元件数量	1	1	1	1
端子数量	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
峰值回流温度（摄氏度）	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	88 A	88 A	88 A	88 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	40	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
JESD-609代码	-	e0	e0	e0
端子面层	-	TIN LEAD	TIN LEAD	TIN LEAD

IRF5NJZ34PBF

IRF5NJZ34PBF概述

IRF5NJZ34PBF规格参数

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