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NAND04GW3B2DN6E

产品描述IC flash 4gbit 48tsop
产品类别存储   
文件大小2MB,共72页
制造商Micron(美光)
官网地址http://www.micron.com/
标准  
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NAND04GW3B2DN6E概述

IC flash 4gbit 48tsop

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NAND04G-B2D
NAND08G-BxC
4-Gbit, 8-Gbit, 2112-byte/1056-word page
multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories
Features
High density NAND flash memory
– Up to 8 Gbits of memory array
– Cost-effective solution for mass storage
applications
NAND interface
– x8 or x16 bus width
– Multiplexed address/data
Supply voltage: 1.8 V or 3 V device
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128K + 4 K spare) bytes
– x16 device: (64K + 2K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic error
detection code (EDC)
Cache read mode
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
Status register
Electronic signature
Chip enable ‘don’t care’
ONFI 1.0 compliant command set
NAND08G-BxC
TSOP48 12 x 20 mm (N)
LGA
ULGA52 12 x 17 x 0.65 mm (ZL)
r
Security features
– OTP area
– Serial number (unique ID)
– Non-volatile protection option
Data protection: hardware program/erase
disabled during power transitions
Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
RoHS compliant packages
Device summary
Part number
NAND04GR3B2D
Table 1.
Reference
NAND04G-B2D
NAND04GW3B2D
NAND04GR4B2D
(1)
NAND04GW4B2D
(1)
NAND08GR3B2C,
NAND08GW3B2C
NAND08GR4B2C
(1)
NAND08GW4B2C
(1)
NAND08GR3B4C
NAND08GW3B4C
1. x16 organization only available for MCP products.
February 2010
Rev 9
1/72
www.numonyx.com
1

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