74AUP1G00
Low-power 2-input NAND gate
Rev. 6 — 27 June 2012
Product data sheet
1. General description
The 74AUP1G00 provides the single 2-input NAND function.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; I
CC
= 0.9
μA
(maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
CC
I
OFF
circuitry provides partial Power-down mode operation
Multiple package options
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
NXP Semiconductors
74AUP1G00
Low-power 2-input NAND gate
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74AUP1G00GW
74AUP1G00GM
74AUP1G00GF
74AUP1G00GN
74AUP1G00GS
74AUP1G00GX
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
Name
TSSOP5
XSON6
XSON6
XSON6
XSON6
X2SON5
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
Version
SOT353-1
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
×
1
×
0.5 mm
extremely thin small outline package; no leads;
6 terminals; body 0.9
×
1.0
×
0.35 mm
extremely thin small outline package; no leads;
6 terminals; body 1.0
×
1.0
×
0.35 mm
X2SON5: plastic thermal enhanced extremely thin
small outline package; no leads; 5 terminals;
body 0.8
×
0.8
×
0.35 mm
SOT1115
SOT1202
SOT1226
4. Marking
Table 2.
Marking
Marking code
[1]
pA
pA
pA
pA
pA
pA
Type number
74AUP1G00GW
74AUP1G00GM
74AUP1G00GF
74AUP1G00GN
74AUP1G00GS
74AUP1G00GX
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
B
1
2
B
A
1
Y
4
2
A
mna097
mna098
&
4
Y
mna099
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
74AUP1G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 June 2012
2 of 21
NXP Semiconductors
74AUP1G00
Low-power 2-input NAND gate
6. Pinning information
6.1 Pinning
74AUP1G00
74AUP1G00
B
A
1
2
5
V
CC
B
1
6
V
CC
A
2
5
n.c.
GND
GND
3
001aaf016
3
4
Y
4
Y
001aaf017
Transparent top view
Fig 4.
Pin configuration SOT353-1
Fig 5.
Pin configuration SOT886
74AUP1G00
74AUP1G00
B
1
3
GND
A
2
4
aaa-002995
5
V
CC
B
A
GND
1
2
3
6
5
4
V
CC
n.c.
Y
Y
001aaf018
Transparent top view
Transparent top view
Fig 6.
Pin configuration SOT891, SOT1115 and
SOT1202
Fig 7.
Pin configuration SOT1226 (X2SON5)
6.2 Pin description
Table 3.
Symbol
B
A
GND
Y
n.c.
V
CC
Pin description
Pin
TSSOP5 and X2SON5
1
2
3
4
-
5
XSON6
1
2
3
4
5
6
data input
data input
ground (0 V)
data output
not connected
supply voltage
Description
74AUP1G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 June 2012
3 of 21
NXP Semiconductors
74AUP1G00
Low-power 2-input NAND gate
7. Functional description
Table 4.
Input
A
L
L
H
H
[1]
Function table
[1]
Output
B
L
H
L
H
Y
H
H
H
L
H = HIGH voltage level; L = LOW voltage level.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
−0.5
−50
−0.5
−50
[1]
[1]
Max
+4.6
-
+4.6
-
V
CC
+ 0.5
+4.6
±20
+50
-
+150
250
Unit
V
mA
V
mA
V
V
mA
mA
mA
°C
mW
V
O
< 0 V
Active mode
Power-down mode
V
O
= 0 V to V
CC
−0.5
−0.5
-
-
−50
−65
T
amb
=
−40 °C
to +125
°C
[2]
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 and X2SON5 packages: above 118
°C
the value of P
tot
derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
Δt/ΔV
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
0.8
0
0
0
−40
0
Max
3.6
3.6
V
CC
3.6
+125
200
Unit
V
V
V
V
°C
ns/V
74AUP1G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 June 2012
4 of 21
NXP Semiconductors
74AUP1G00
Low-power 2-input NAND gate
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 μA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
μA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
OFF
ΔI
OFF
I
CC
ΔI
CC
C
I
C
O
input leakage current
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
input capacitance
output capacitance
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
I
= V
CC
−
0.6 V; I
O
= 0 A;
V
CC
= 3.3 V
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
V
O
= GND; V
CC
= 0 V
[1]
Conditions
Min
Typ
Max
-
-
-
-
Unit
V
V
V
V
0.70
×
V
CC
-
0.65
×
V
CC
-
1.6
2.0
-
-
-
-
V
CC
−
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
1.7
0.30
×
V
CC
V
0.35
×
V
CC
V
0.7
0.9
-
-
-
-
-
-
-
-
0.1
0.3
×
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
0.5
40
-
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
μA
μA
μA
μA
μA
pF
pF
0.75
×
V
CC
-
74AUP1G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 June 2012
5 of 21
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
