PD- 96093
IRF840LPbF
HEXFET
®
Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead-Free
Description
Third Generation HEXFETs from International Rectifier provide the
designer with best combination of fast switching, ruggedized device
design, low on- resistance and cost-effectiveness.
The TO-262 is a power package capable of accommodating die sizes
up to HEX-4. It provides the highest power capability and lowest possible
on-resistance. The TO-262 is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W.
TO-262
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
8.0
5.1
32
125
50
1.0
± 20
510
8.0
13
3.5
-55 to + 150
300 (1.6mm from case)
Units
A
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
Peak Diode Recovery dv/dt
e
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Current
c
d
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
1.0
62
Units
°C/W
www.irf.com
1
10/18/06
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
