PD - 97002A
Applications
l
High frequency DC-DC converters
l
Plasma Display Panel
Benefits
l
Low Gate-to-Drain Charge to
Reduce\ Switching Losses
l
Fully Characterized Capacitance
Including Effective C
OSS
to Simplify
Design, (See App. Note AN1001)
l
Fully Characterized Avalanche
Voltage and Current
l
Lead-Free
HEXFET
®
Power MOSFET
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
Key Parameters
V
DS
V
DS (Avalanche)
min.
R
DS(ON)
max @ 10V
T
J
max
150
200
32
175
V
V
m
:
°C
TO-220AB
IRFB52N15DPbF
D
2
Pak
IRFS52N15DPbF
TO-262
IRFSL52N15DPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
51*
36*
240
3.8
230*
1.5*
± 30
5.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes
through
are on page 11
www.irf.com
1
09/22/10
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.16
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
32
mΩ V
GS
= 10V, I
D
= 36A
5.0
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 150V, V
GS
= 0V
µA
250
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
60
18
28
16
47
28
25
2770
590
110
3940
260
550
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 36A
89
I
D
= 36A
27
nC V
DS
= 75V
42
V
GS
= 10V,
–––
V
DD
= 75V
–––
I
D
= 36A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 120V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
V
DS (Avalanche)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Voltage
Repetitive Avalanche Energy
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Ã
dh
Min.
–––
–––
–––
200
Min. Typ. Max. Units
Typ.
–––
–––
450
–––
Max.
470
36
–––
–––
Units
mJ
A
mJ
V
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
60
––– –––
showing the
A
G
integral reverse
––– ––– 240
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 36A, V
GS
= 0V
––– 140 210
nS
T
J
= 25°C, I
F
= 36A
––– 780 1170 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
1000
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
10
10
5.0V
1
5.0V
300µs PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
300µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
3.0
I
D
= 60A
ID, Drain-to-Source Current
(Α
)
2.5
100.00
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
T J = 175°C
2.0
1.5
10.00
T J = 25°C
1.0
1.00
5.0
7.0
9.0
VDS = 15V
300µs PULSE WIDTH
11.0
13.0
15.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
12
10
8
6
4
2
0
ID = 36A
VDS = 120V
VDS = 75V
10000
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
ID , Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
1msec
10.00
T J = 25°C
1.00
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
10msec
0.1
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
70
V
DS
60
R
D
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
50
-
V
DD
I
D
, Drain Current (A)
40
30
Fig 10a.
Switching Time Test Circuit
20
V
DS
10
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.1
0.20
0.10
Thermal Response
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
C
1
J
= P
DM
x Z
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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