Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 300 mW
•
Tolerance:
±5%
•
Working voltage range: nom. 1.8 to 43 V (E24 range)
•
Improved I
Z
/V
Z
characteristic at low currents
(I
Z
= 50
µA).
This results in a noise free and sharp
breakdown knee.
APPLICATIONS
•
General regulation functions, where low noise at low
currents is required
•
Low power consumption applications
(e.g. hand-held applications).
DESCRIPTION
Low-power low noise voltage regulator diodes in SOD323
plastic SMD package.
The diodes are available in the normalized E24
±5%
tolerance range. The series consists of 34 types with
nominal working voltages from 1.8 to 43 V.
MARKING
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
BZX399 series
PINNING
PIN
1
2
cathode
anode
handbook, halfpage
1
Top view
Fig.1 Simplified outline (SOD323) and symbol.
,
BJ
BK
BL
BM
BN
BP
BQ
BR
BS
DESCRIPTION
2
MAM387
TYPE NUMBER
MARKING
CODE
BZX399-C1V8
BZX399-C2V0
BZX399-C2V2
BZX399-C2V4
BZX399-C2V7
BZX399-C3V0
BZX399-C3V3
BZX399-C3V6
BZX399-C3V9
B1
B2
B3
B4
B5
B6
B7
B8
B9
BZX399-C4V3
BZX399-C4V7
BZX399-C5V1
BZX399-C5V6
BZX399-C6V2
BZX399-C6V8
BZX399-C7V5
BZX399-C8V2
BZX399-C9V1
B0
BA
BB
BC
BD
BE
BF
BG
BH
BZX399-C10
BZX399-C11
BZX399-C12
BZX399-C13
BZX399-C15
BZX399-C16
BZX399-C18
BZX399-C20
BZX399-C22
BZX399-C24
BZX399-C27
BZX399-C30
BZX399-C33
BZX399-C36
BZX399-C39
BZX399-C43
BT
BU
BV
BW
BX
BY
BZ
1999 Jun 04
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on a FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX399-C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZX399-C1V8
BZX399-C2V0
BZX399-C2V2
BZX399-C2V4
BZX399-C2V7
BZX399-C3V0
BZX399-C3V3
BZX399-C3V6
BZX399-C3V9
BZX399-C4V3
BZX399-C4V7
BZX399-C5V1
BZX399-C5V6
BZX399-C6V2
BZX399-C6V8
BZX399-C7V5
BZX399-C8V2
BZX399-C9V1
BZX399-C10
BZX399-C11
BZX399-C12
BZX399-C13
BZX399-C15 to 43
1999 Jun 04
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 3 V
V
R
= 3 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 7 V
V
R
= 8 V
V
R
= 9 V
V
R
= 10 V
V
R
= 0.7V
Znom
3
2
1
0.5
0.2
0.05
0.02
2
1
0.5
0.1
2
1
1
0.1
0.01
0.1
0.2
0.1
0.1
0.05
0.05
0.05
0.01
CONDITIONS
I
F
= 10 mA; see Fig.5
I
F
= 100 mA; see Fig.5
0.9
1.0
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
amb
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
CONDITIONS
−
MIN.
BZX399 series
MAX.
250
UNIT
mA
see Tables 1 and 2
−
−65
−
300
+150
150
mW
°C
°C
MAX.
V
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
UNIT
Philips Semiconductors
Product specification
Voltage regulator diodes
Table 2
Per type BZX399-C16 to
C43
T
j
= 25
°C
unless otherwise specified.
WORKING
VOLTAGE
V
Z
(V)
I
Z
= 50
µA
Tol.
±5%
MIN.
16
18
20
22
24
27
30
33
36
39
43
Note
1.
∆V
Z
= V
Z
at 100
µA
minus V
Z
at 10
µA.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Notes
1. Device mounted on a FR4 printed circuit-board.
2. Soldering point of the cathode tab.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
MAX.
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
MAX.
0.16
0.18
0.20
0.22
0.24
0.27
0.30
0.30
0.30
0.30
0.30
TYP.
11.4
13.3
15.3
17.2
19.2
22.0
25.2
28.5
32.0
35.1
39.4
MAX.
95
95
90
85
80
75
65
60
60
60
55
VOLTAGE
CHANGE
∆V
Z
(V)
(note 1)
TEMP. COEFF.
S
Z
(mV/K)
I
Z
= 50
µA
(see Fig.4)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
BZX399 series
BZX399- C
XXX
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
1.5
1.5
1.5
1.25
1.25
1.0
1.0
0.9
0.8
0.7
0.6
VALUE
415
110
UNIT
K/W
K/W
thermal resistance from junction to soldering point note 2
1999 Jun 04
5
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