F/FAST SERIES, HEX 1-INPUT INVERT GATE, CDIP14, CERAMIC, MO-036AB, DIP-14
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
包装说明 | DIP, DIP14,.3 |
Reach Compliance Code | compli |
系列 | F/FAST |
JESD-30 代码 | R-GDIP-T14 |
JESD-609代码 | e0 |
逻辑集成电路类型 | INVERTER |
最大I(ol) | 0.02 A |
湿度敏感等级 | 1 |
功能数量 | 6 |
输入次数 | 1 |
端子数量 | 14 |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
封装主体材料 | CERAMIC, GLASS-SEALED |
封装代码 | DIP |
封装等效代码 | DIP14,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
峰值回流温度(摄氏度) | 260 |
电源 | 5 V |
最大电源电流(ICC) | 25 mA |
Prop。Delay @ Nom-Su | 13 ns |
传播延迟(tpd) | 13 ns |
认证状态 | Not Qualified |
施密特触发器 | YES |
筛选级别 | MIL-STD-883 |
座面最大高度 | 5.08 mm |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | TTL |
温度等级 | MILITARY |
端子面层 | Tin/Lead (Sn63Pb37) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 40 |
宽度 | 7.62 mm |
Base Number Matches | 1 |
54F14DM-MLS | 5962-8875201DA | 5962-8875201CA | 5962-88752012A | |
---|---|---|---|---|
描述 | F/FAST SERIES, HEX 1-INPUT INVERT GATE, CDIP14, CERAMIC, MO-036AB, DIP-14 | F/FAST SERIES, HEX 1-INPUT INVERT GATE, CDFP14, CERPACK-14 | F/FAST SERIES, HEX 1-INPUT INVERT GATE, CDIP14, CERAMIC, MO-036AB, DIP-14 | F/FAST SERIES, HEX 1-INPUT INVERT GATE, CQCC20, MS-004CB, LCC-20 |
包装说明 | DIP, DIP14,.3 | QFF, FL14,.3 | DIP, DIP14,.3 | QCCN, LCC20,.35SQ |
Reach Compliance Code | compli | unknown | unknown | unknown |
系列 | F/FAST | F/FAST | F/FAST | F/FAST |
JESD-30 代码 | R-GDIP-T14 | R-GDFP-F14 | R-GDIP-T14 | S-CQCC-N20 |
JESD-609代码 | e0 | e0 | e0 | e0 |
逻辑集成电路类型 | INVERTER | INVERTER | INVERTER | INVERTER |
最大I(ol) | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
功能数量 | 6 | 6 | 6 | 6 |
输入次数 | 1 | 1 | 1 | 1 |
端子数量 | 14 | 14 | 14 | 20 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C |
封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DIP | QFF | DIP | QCCN |
封装等效代码 | DIP14,.3 | FL14,.3 | DIP14,.3 | LCC20,.35SQ |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE |
封装形式 | IN-LINE | FLATPACK | IN-LINE | CHIP CARRIER |
电源 | 5 V | 5 V | 5 V | 5 V |
最大电源电流(ICC) | 25 mA | 25 mA | 25 mA | 25 mA |
传播延迟(tpd) | 13 ns | 13 ns | 13 ns | 13 ns |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
施密特触发器 | YES | YES | YES | YES |
筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
座面最大高度 | 5.08 mm | 2.03 mm | 5.08 mm | 1.91 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | YES | NO | YES |
技术 | TTL | TTL | TTL | TTL |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY |
端子面层 | Tin/Lead (Sn63Pb37) | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | THROUGH-HOLE | FLAT | THROUGH-HOLE | NO LEAD |
端子节距 | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL | QUAD |
宽度 | 7.62 mm | 6.35 mm | 7.62 mm | 8.89 mm |
Base Number Matches | 1 | 1 | 1 | 1 |
负载电容(CL) | - | 50 pF | 50 pF | 50 pF |
Prop。Delay @ Nom-Sup | - | 13 ns | 13 ns | 13 ns |
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