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CFY67-08H: 产品描述RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4; 产品类别分立半导体晶体管; 文件大小47KB，共9页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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CFY67-08H概述

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4

CFY67-08H规格参数

参数名称	属性值
厂商名称	Infineon(英飞凌)
包装说明	DISK BUTTON, O-XRDB-F4
针数	4
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	LOW NOISE
外壳连接	SOURCE
配置	SINGLE
最小漏源击穿电压	3.5 V
最大漏极电流 (Abs) (ID)	0.06 A
最大漏极电流 (ID)	0.06 A
FET 技术	HIGH ELECTRON MOBILITY
最高频带	K BAND
JESD-30 代码	O-XRDB-F4
JESD-609代码	e3
元件数量	1
端子数量	4
工作模式	DEPLETION MODE
最高工作温度	150 °C
封装主体材料	UNSPECIFIED
封装形状	ROUND
封装形式	DISK BUTTON
极性/信道类型	N-CHANNEL
功耗环境最大值	0.2 W
最小功率增益 (Gp)	11 dB
认证状态	Not Qualified
参考标准	ESA/SCC 5613/004
表面贴装	YES
端子面层	MATTE TIN
端子形式	FLAT
端子位置	RADIAL
晶体管应用	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE
Base Number Matches	1

CFY67-08H相似产品对比

	CFY67-08H	CFY67-06P	CFY67-08PS	CFY67-08PES	CFY67-06ES	CFY67-08PP	CFY67-08ES	CFY67-06S	CFY67-06H	CFY67-08PH
描述	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
厂商名称	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
包装说明	DISK BUTTON, O-XRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-XRDB-F4	DISK BUTTON, O-XRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-XRDB-F4	DISK BUTTON, O-XRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-XRDB-F4
针数	4	4	4	4	4	4	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	3.5 V	3.5 V	3.5 V	3.5 V	3.5 V	3.5 V	3.5 V	3.5 V	3.5 V	3.5 V
最大漏极电流 (Abs) (ID)	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A
最大漏极电流 (ID)	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A
FET 技术	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY
最高频带	K BAND	K BAND	K BAND	K BAND	K BAND	K BAND	K BAND	K BAND	K BAND	K BAND
JESD-30 代码	O-XRDB-F4	O-CRDB-F4	O-XRDB-F4	O-XRDB-F4	O-CRDB-F4	O-XRDB-F4	O-XRDB-F4	O-CRDB-F4	O-CRDB-F4	O-XRDB-F4
JESD-609代码	e3	e3	e3	e3	e3	e3	e3	e3	e3	e3
元件数量	1	1	1	1	1	1	1	1	1	1
端子数量	4	4	4	4	4	4	4	4	4	4
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
功耗环境最大值	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
最小功率增益 (Gp)	11 dB	11.5 dB	11 dB	11 dB	11.5 dB	11 dB	11 dB	11.5 dB	11.5 dB	11 dB
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
参考标准	ESA/SCC 5613/004	ESA/SCC 5613/004	ESA/SCC 5613/004	ESA/SCC 5613/004	ESA/SCC 5613/004	ESA/SCC 5613/004	ESA/SCC 5613/004	ESA/SCC 5613/004	ESA/SCC 5613/004	ESA/SCC 5613/004
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子面层	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Base Number Matches	1	1	1	1	1	1	1	1	1	1

CFY67-08H

CFY67-08H概述

CFY67-08H规格参数

CFY67-08H相似产品对比

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