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CFY67-06S

产品描述RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4
产品类别分立半导体    晶体管   
文件大小47KB,共9页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
下载文档 详细参数 选型对比 全文预览

CFY67-06S概述

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4

CFY67-06S规格参数

参数名称属性值
厂商名称Infineon(英飞凌)
包装说明DISK BUTTON, O-CRDB-F4
针数4
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW NOISE
外壳连接SOURCE
配置SINGLE
最小漏源击穿电压3.5 V
最大漏极电流 (Abs) (ID)0.06 A
最大漏极电流 (ID)0.06 A
FET 技术HIGH ELECTRON MOBILITY
最高频带K BAND
JESD-30 代码O-CRDB-F4
JESD-609代码e3
元件数量1
端子数量4
工作模式DEPLETION MODE
最高工作温度150 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状ROUND
封装形式DISK BUTTON
极性/信道类型N-CHANNEL
功耗环境最大值0.2 W
最小功率增益 (Gp)11.5 dB
认证状态Not Qualified
参考标准ESA/SCC 5613/004
表面贴装YES
端子面层MATTE TIN
端子形式FLAT
端子位置RADIAL
晶体管应用AMPLIFIER
晶体管元件材料GALLIUM ARSENIDE
Base Number Matches1

CFY67-06S相似产品对比

CFY67-06S CFY67-06P CFY67-08PS CFY67-08H CFY67-08PES CFY67-06ES CFY67-08PP CFY67-08ES CFY67-06H CFY67-08PH
描述 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
厂商名称 Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
包装说明 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-XRDB-F4
针数 4 4 4 4 4 4 4 4 4 4
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
外壳连接 SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小漏源击穿电压 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V
最大漏极电流 (Abs) (ID) 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A
最大漏极电流 (ID) 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A
FET 技术 HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY
最高频带 K BAND K BAND K BAND K BAND K BAND K BAND K BAND K BAND K BAND K BAND
JESD-30 代码 O-CRDB-F4 O-CRDB-F4 O-XRDB-F4 O-XRDB-F4 O-XRDB-F4 O-CRDB-F4 O-XRDB-F4 O-XRDB-F4 O-CRDB-F4 O-XRDB-F4
JESD-609代码 e3 e3 e3 e3 e3 e3 e3 e3 e3 e3
元件数量 1 1 1 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4 4 4 4
工作模式 DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
功耗环境最大值 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
最小功率增益 (Gp) 11.5 dB 11.5 dB 11 dB 11 dB 11 dB 11.5 dB 11 dB 11 dB 11.5 dB 11 dB
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
参考标准 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004
表面贴装 YES YES YES YES YES YES YES YES YES YES
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
Base Number Matches 1 1 1 1 1 1 1 1 1 1
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