NE
W
Central
CMST2907A
DESCRIPTION:
TM
Semiconductor Corp.
SUPER-MINI
PNP SILICON TRANSISTOR
SUPER
mini
TM
The CENTRAL SEMICONDUCTOR
CMST2907A type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a super-mini surface mount
package, designed for small signal general
purpose and switching applications.
SOT-323 CASE
MAXIMUM RATINGS:
(TA=25
o
C)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ
JA
UNITS
V
V
V
mA
mW
o
C
o
C/W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
60
60
5.0
600
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS:
(TA=25
o
C unless otherwise noted)
SYMBOL
ICBO
ICBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
TEST CONDITIONS
VCB=50V
VCB=50V, TA=125
o
C
VCE=30V, VBE=0.5V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
MIN
MAX
10
10
50
UNITS
nA
µA
nA
V
V
V
V
V
V
V
60
60
5.0
0.4
1.6
1.3
2.6
75
100
248
SYMBOL
hFE
hFE
hFE
fT
Cob
Cib
ton
td
tr
toff
ts
tf
TEST CONDITIONS
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VBE=2.0V, IC=0, f=1.0MHz
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
MIN
100
100
50
200
MAX
300
UNITS
8.0
30
45
10
40
100
80
30
MHz
pF
pF
ns
ns
ns
ns
ns
ns
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
R1
249
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