MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800DZ-34H
q
I
C ...................................................................
800A
q
V
CES .......................................................
1700V
q
Insulated Type
q
2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
130
114
57
±0.25
57
±0.25
Dimensions in mm
4 - M8 NUTS
E1
E1
20
C2
C2
G1
G2
124
±0.25
140
30
E1
C2
C1
C1
E2
E2
CM
C1
E2
E1
G1
C1
C2
G2
E2
CIRCUIT DIAGRAM
16
40
6 - M4 NUTS
53
18
44
57
55.2
6 -
φ
7 MOUNTING HOLES
5
35
11.5
14
31.5
38
11.85
28
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
5
LABEL
Oct. 2002
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
(Tj = 25
°
C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
V
GE
= 0V
V
CE
= 0V
T
C
= 25°C
Pulse
T
C
= 25°C
Pulse
T
C
= 25°C, IGBT part
Conditions
Ratings
1700
±20
800
1600
800
1600
5000
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.0
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
(Note 1)
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note 2)
t
rr (Note 2)
Q
rr (Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Note 1.
2.
3.
4.
Item
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 80mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 800A, V
GE
= 15V
T
j
= 125°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 850V, I
C
= 800A, V
GE
= 15V
V
CC
= 850V, I
C
= 800A
V
GE1
= V
GE2
= 15V
R
G
= 3.3Ω
Resistive load switching operation
I
E
= 800A, V
GE
= 0V
I
E
= 800A
die / dt = –1600A /
µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
5.5
—
2.80
3.20
72
9.0
3.6
6.6
—
—
—
—
2.60
—
150
—
—
0.020
Max
12
6.5
0.5
3.64
—
—
—
—
—
1.60
2.00
2.70
0.80
3.38
2.70
—
0.025
0.043
—
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
(Note 4)
Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Oct. 2002
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
1600
T
j
=25°C
1600
TRANSFER CHARACTERISTICS
(TYPICAL)
V
CE
=10V
COLLECTOR CURRENT I
C
(A)
1200
COLLECTOR CURRENT I
C
(A)
1200
800
800
400
400
T
j
= 25°C
T
j
= 125°C
0
0
4
8
12
16
20
0
0
2
4
6
8
10
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
V
GE
=15V
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
5
10
T
j
= 25°C
8
4
3
6
2
4
1
T
j
= 25°C
T
j
= 125°C
0
0
400
800
1200
1600
2
0
0
4
8
12
16
20
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
0
1
2
3
4
5
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
EMITTER CURRENT I
E
(A)
10
4
7
5
3
2
T
j
=25°C
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
V
GE
= 0V, T
j
= 25°C
C
ies,
C
oes
: f = 100kHz
: f = 1MHz
C
res
10
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
Oct. 2002
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
2
10
0
7
5
3
2
10
–1
7
5
V
CC
= 850V, V
GE
=
±15V
R
G
= 3.3Ω, T
j
= 125°C
Inductive load
5 7 10
2
2 3
5 7 10
3
2 3
5
REVERSE RECOVERY TIME t
rr
(
µs
)
10
1
7
5
3
2
10
0
7
5
10
3
7
5
3
2
10
2
7
5
5 7 10
2
2 3
5 7 10
3
2 3
5
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
Single Pulse
T
C
= 25°C
R
th(j – c)
= 0.043K/W
(Per 1/2 module)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
Single Pulse
T
C
= 25°C
R
th(j – c)
= 0.025K/W
(Per 1/2 module)
10
–2
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
V
GE
– GATE CHARGE
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
V
CC
= 850V
I
C
= 800A
16
12
8
4
0
0
1000
2000
3000
4000
5000
GATE CHARGE Q
G
(nC)
REVERSE RECOVERY CURRENT I
rr
(A)
SWITCHING TIMES (
µs
)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
V
CC
= 850V, T
j
= 125°C
3
3 Inductive load
V
GE
=
±15V,
R
G
= 3.3Ω
2
2
Oct.2002
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