MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
A
B
C
B
u
P E
u
P
B
v
P E
v
P
B
w
P E
w
P
P
J
N
u
v
w
E
N
D
B
u
N E
u
N
B
v
N E
v
N
B
w
N E
w
N
S - DIA.
(2 TYP.)
M
R
F
R
L
F
R
L
K
Q
TAB #110, t = 0.5
TAB #250, t = 0.8
G
P
H
R
P
(BuP)
GuP
EuP
u
(BvP)
GvP
EvP
v
(BwP)
GwP
EwP
w
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-12H
is a 600V (V
CES
), 50 Ampere Six-
IGBT Module.
Type
CM
Current Rating
Amperes
50
V
CES
Volts (x 50)
12
(BuN)
GuN
EuN
N
(BvN)
GvN
EvN
(BwN)
GwN
EwN
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
5.00
4.33±0.01
3.86
2.20
1.57
1.12
1.04
1.01
0.98
Millimeters
127.0
110.0±0.2
98.0
56.0
40.0
28.5
26.5
25.6
25.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.85
0.83
0.75
0.71
0.69
0.65
0.30
0.22 Dia.
Millimeters
21.5
21.0
19.0
18.0
17.5
16.5
7.5
Dia. 5.5
Sep.1998
MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
C
= 25°C)
Peak Collector Current
Emitter Current** (T
C
= 25°C)
Peak Emitter Current
Maximum Collector Dissipation (T
C
= 25°C, Tj
≤
150°C)
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
V
iso
CM50TF-12H
–40 to 150
–40 to 125
600
±20
50
100*
50
100*
250
1.47 ~ 1.96
390
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
Grams
Vrms
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 5mA, V
CE
= 10V
I
C
= 50A, V
GE
= 15V
I
C
= 50A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Emitter-Collector Voltage
V
CC
= 300V, I
C
= 50A, V
GE
= 15V
I
E
= 50A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.1
2.15
150
–
Max.
1.0
0.5
7.5
2.8**
–
–
2.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 50A, di
E
/dt = –100A/µs
I
E
= 50A, di
E
/dt = –100A/µs
V
CC
= 300V, I
C
= 50A,
V
GE1
= V
GE2
= 15V, R
G
= 13Ω
V
GE
= 0V, V
CE
= 10V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.14
Max.
5
1.8
1
200
300
200
300
110
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.50
1.00
0.042
Units
°C/W
°C/W
°C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
100
T
j
= 25
o
C
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
100
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
V
GE
= 20V
15
12
75
11
75
4
3
50
10
50
2
25
7
9
8
25
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
0
25
50
75
100
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
2
T
j
= 25°C
EMITTER CURRENT, I
E
, (AMPERES)
10
1
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
8
C
ies
I
C
= 100A
6
I
C
= 50A
10
1
10
0
C
oes
4
2
I
C
= 20A
V
GE
= 0V
C
res
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
0
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
t
f
10
1
20
I
C
= 50A
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
16
SWITCHING TIME, (ns)
t
d(off)
I
rr
V
CC
= 200V
12
10
2
t
d(on)
10
2
t
rr
10
0
V
CC
= 300V
8
t
r
V
CC
= 300V
V
GE
= ±15V
R
G
= 13Ω
T
j
= 125°C
di/dt = -100A/µsec
T
j
= 25°C
4
10
1
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
-1
10
2
0
0
50
100
150
200
250
GATE CHARGE, Q
G
, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.5°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 1.0°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
Sep.1998
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