CM400HB-90H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™
HVIGBT
400 Amperes/4500 Volts
A
D
L
S
Y
N
L
V NUTS
(4 TYP)
P
F
CM
C
C
G
E
B
E
E
Q
C
E
G
R
T
U NUTS
(3 TYP)
J
K
M
H
W
(6 TYP)
X
C
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor with a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
C
C
C
G
E
E
E
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
Inches
5.12
5.51
1.50
4.48
4.88±0.01
1.57
0.79
0.41
0.42
1.92
2.24±0.01
1.71
Millimeters
130.0
140.0
38.0
114.0
124.0±0.25
40.0
20.0
10.35
10.65
48.8
57.0±0.25
43.5
Dimensions
N
P
Q
R
S
T
U
V
W
X
Y
Inches
2.42
0.59
1.57
0.20
1.16
1.10
M4 Metric
M8 Metric
0.28 Dia.
0.20
0.71
Millimeters
61.5
15.0
40.0
5.2
29.5
28.0
M4
M8
Dia.7.0
5.0
18.0
Applications:
□
Traction
□
Medium Voltage Drive
□
High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM400HB-90H is a 4500V (V
CES
),
400 Ampere Single IGBTMOD™
Power Module.
Type
CM
Current Rating
Amperes
400
V
CES
Volts (x 50)
90
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HB-90H
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (V
GE
= 0V)
Gate-Emitter Voltage (V
CE
= 0V)
Collector Current (T
c
= 25°C)
Peak Collector Current (Pulse)
Diode Forward Current** (T
c
= 25°C)
Diode Forward Surge Current** (Pulse)
Maximum Collector Dissipation (T
c
= 25°C, IGBT Part, T
j
≤
125°C)
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Max. Mounting Torque M4 Auxiliary Terminal Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
* Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
C
–
–
–
–
V
iso
CM400HB-90H
-40 to 150
-40 to 125
4500
±20
400
800*
400
800*
4300
115
53
17
1.5
6000
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
kg
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 40mA, V
CE
= 10V
I
C
= 400A, V
GE
= 15V, T
j
= 25°C
I
C
= 400A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage**
V
CC
= 2250V, I
C
= 400A, V
GE
= 15V
I
E
= 400A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
3.0
3.3
3.6
4.0
Max.
8.0
0.5
7.5
3.9*
–
–
5.2
Units
mA
µ
A
Volts
Volts
Volts
µC
Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HB-90H
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 2250V, I
C
= 400A,
V
GE1
= V
GE2
= 15V,
R
G
= 22.5Ω
Resistive Load Switching Operation
I
E
= 400A, di
E
/dt = -800A/
µ
s
I
E
= 400A, di
E
/dt = -800A/
µ
s
V
GE
= 0V, V
CE
= 10V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
72
5.3
1.6
–
–
–
–
–
160*
Max.
–
–
–
2.4
2.4
6.0
1.2
1.8
–
Units
nF
nF
nF
µs
µs
µs
µs
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
µ
s
µ
C
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
0.015
Max.
0.023
0.045
–
Units
K/W
K/W
K/W
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HB-90H
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
6
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
6
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
1.2
1.0
0.8
0.6
0.4
0.2
0
10
-3
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.023 K/W
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
5
4
3
2
1
0
0
5
4
3
2
1
0
T
j
= 25°C
T
j
= 125°C
200
400
600
800
1000
0
200
400
600
800
1000
10
-2
TIME, (s)
10
-1
10
0
COLLECTOR CURRENT, I
C
, (AMPERES)
EMITTER CURRENT, I
E
, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
HALF-BRIDGE TURN-ON SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE TURN-OFF SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
1.2
1.0
0.8
0.6
0.4
0.2
0
10
-3
TURN-ON SWITCHING ENERGY, E
on
, (J/P)
5
TURN-OFF SWITCHING ENERGY, E
off
, (J/P)
3.0
V
CC
= 2250V
V
GE
=
±15V
R
G
= 22.5Ω
L
S
= 180nH
T
j
= 125°C
Inductive Load Integrated
Over Range of 10%
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.045 K/W
4
2.5
2.0
1.5
1.0
0.5
0
0
3
V
CC
= 2250V
V
GE
=
±15V
R
G
= 22.5Ω
L
S
= 180nH
T
j
= 125°C
Inductive Load Integrated
Over Range of 10%
2
1
10
-2
TIME, (s)
10
-1
10
0
0
0
200
400
600
800
COLLECTOR CURRENT, I
C
, (AMPERES)
200
400
600
800
COLLECTOR CURRENT, I
C
, (AMPERES)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TURN-ON SWITCHING
SAFE OPERATING AREA (RBSOA)
(TYPICAL)
DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(TYPICAL)
0.30
REVERSE RECOVERY ENERGY, E
rec
, (J/P)
COLLECTOR CURRENT, I
C
, (VOLTS)
1000
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
1500
1250
1000
750
500
250
0
0
1000
2000
3000
4000
5000
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0.25
0.20
0.15
0.10
0.05
0
0
200
400
600
800
EMITTER CURRENT, I
E
, (AMPERES)
800
600
V
CC
= 2250V
V
GE
=
±15V
R
G
= 22.5Ω
L
S
= 180nH
T
j
= 125°C
Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions
400
V
CC
= 3000V
V
GE
=
±15V
R
G
= 22.5Ω
L
S
= 100nH
T
j
= 125°C
200
0
4
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