CM30TF-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six-IGBT IGBTMOD™
H-Series Module
30 Amperes/1200 Volts
A
B
C
B
u
P E
u
P
B
v
P E
v
P
B
w
P E
w
P
P
J
N
u
v
w
E
N
D
B
u
N E
u
N
B
v
N E
v
N
B
w
N E
w
N
S - DIA.
(2 TYP.)
M
R
F
R
L
.250 TAB
F
R
L
K
Q
.110 TAB
G
P
H
R
P
(BuP)*
GuP
EuP
u
(BvP)
GvP
EvP
v
(BwP)
GwP
EwP
w
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
□
High Frequency Operation
(20-25kHz)
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM30TF-24H
is a 1200V (V
CES
), 30 Ampere
Six-IGBT IGBTMOD™ Power
Module.
Type
CM
Current Rating
Amperes (30)
30
V
CES
Volts (x 50)
24
(BuN)
GuN
EuN
N
(BvN)
GvN
EvN
(BwN)
GwN
EwN
* Parentheses indicate module marking
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
5.0
4.33±0.01
3.86
2.20
1.57
1.12
1.04
1.01
0.98
Millimeters
127.0
110.0±0.3
98.0
56.0
40.0
28.5
26.5
25.6
25.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.85
0.83
0.75
0.71
0.69
0.65
0.3
0.22 Dia.
Millimeters
21.5
21.0
19.0
18.0
17.5
16.5
7.5
Dia. 5.5
331
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM30TF-24H
Six-IGBT IGBTMOD™ H-Series Module
30 Amperes/1200 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M5 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
d
–
–
V
RMS
CM30TF-24H
–40 to 150
–40 to 125
1200
±20
30
60*
30
60*
310
17
390
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
Grams
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
FM
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 3mA, V
CE
= 10V
I
C
= 30A, V
GE
= 15V
I
C
= 30A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Diode Forward Voltage
V
CC
= 600V, I
C
= 30A, V
GS
= 15V
I
C
= 30A, V
GS
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.5
2.25
150
–
Max.
1.0
0.5
7.5
3.4**
–
–
3.5
Units
mA
µ
A
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 30A, di
E
/dt = –60A/
µ
s
I
E
= 30A, di
E
/dt = –60A/
µ
s
V
CC
= 600V, I
C
= 30A,
V
GE1
= V
GE2
= 15V, R
G
= 10Ω
V
GE
= 0V, V
CE
= 10V, f = 1MHz
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.22
Max.
6
2.1
1.2
100
200
150
350
250
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
µ
C
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.50
1.40
0.042
Units
°C/W
°C/W
°C/W
332
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM30TF-24H
Six-IGBT IGBTMOD™ H-Series Module
30 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
60
V
GE
= 20V
COLLECTOR CURRENT, I
C
, (AMPERES)
60
15
12
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
CE
= 15V
T
j
= 25°C
T
j
= 125°C
50
40
T
j
= 25°C
50
40
30
20
10
0
4
11
3
30
10
2
20
9
10
7
8
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
4
8
12
16
20
0
0
10
20
30
40
50
60
COLLECTOR-CURRENT, I
C
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
2
T
j
= 25°C
T
j
= 25°C
I
C
= 60A
I
C
= 30A
EMITTER CURRENT, I
E
, (AMPERES)
CAPACITANCE, C
ies
, C
oes
, C
res
, (pF)
10
1
C
ies
V
GE
= 0V
8
10
0
C
oes
6
10
1
4
10
-1
C
res
2
I
C
= 12A
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
0
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-2
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
t
d(off)
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
di/dt = -60A/µsec
T
j
= 25°C
I
rr
t
rr
10
1
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 30A
t
f
SWITCHING TIME, (ns)
16
V
CC
= 400V
V
CC
= 600V
12
10
2
t
d(on)
10
2
10
0
8
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 125°C
4
10
1
10
0
t
r
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
-1
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
40
80
120
160
200
240
GATE CHARGE, Q
G
, (nC)
333
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM30TF-24H
Six-IGBT IGBTMOD™ H-Series Module
30 Amperes/1200 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.5°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 1.4°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-3
10
-4
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
334
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
