MO8209
High Frequency, Ultra Performance Oscillator
Features
Applications
Any frequency between 80.000001 and 220 MHz accurate to 6
decimal places
100% pin-to-pin drop-in replacement to quartz-based oscillators
Ultra-low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as ±10 PPM
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
4-pin packages: 2.7 x 2.4 (compatible with 2.5 x 2.0 footprint),
3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra-short lead time
SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI Express,
video, Wireless
storage, networking, telecom, industrial control
Computing,
Standard
Electrical Characteristics
Parameter
Output Frequency Range
Symbol
f
Min.
80.000001
-10
Frequency Stability
F_stab
-20
-25
-50
Operating Temperature Range
T_use
-20
-40
+1.71
Supply Voltage
Vdd
+2.25
+2.52
+2.97
Current Consumption
Idd
–
–
–
–
–
Standby Current
I_std
–
Duty Cycle
Rise/Fall Time
Output Voltage High
Output Voltage Low
Input Voltage High
Input Voltage Low
Input Pull-up Impedance
Startup Time
OE Enable/Disable Time
Resume Time
RMS Period Jitter
RMS Phase Jitter (random)
First year Aging
10-year Aging
DC
Tr, Tf
VOH
VOL
VIH
VIL
Z_in
2.0
T_start
T_oe
T_resume
T_jitt
T_phj
F_aging
–
–
–
–
–
–
-1.5
-5.0
45
40
–
90%
–
70%
–
–
–
–
–
1.2
–
–
–
–
100
–
7.0
–
–
1.5
2.0
0.5
–
–
+10
55
60
2.0
–
10%
–
30%
250
–
10
115
10
2.0
3.0
1.0
+1.5
+5.0
μA
%
%
ns
Vdd
Vdd
Vdd
Vdd
kΩ
MΩ
ms
ns
ms
ps
ps
ps
PPM
PPM
Pin 1, OE or
ST
Pin 1, OE or
ST
Pin 1, OE logic high or logic low, or
ST
logic high
Pin 1,
ST
logic low
Measured from the time Vdd reaches its rated minimum value
f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles
In standby mode, measured from the time
ST
pin
crosses 50% threshold. Refer to
Figure 5.
f = 156.25 MHz, Vdd = +2.5V, +2.8V or +3.3V
f = 156.25 MHz, Vdd = +1.8V
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz
+25°C
+25°C
Typ.
–
–
–
–
–
–
–
+1.8
+2.5
+2.8
+3.3
+34
+30
–
–
–
Max.
220
+10
+20
+25
+50
+70
+85
+1.89
+2.75
+3.08
+3.63
+36
+33
+31
+30
+70
Unit
MHz
PPM
PPM
PPM
PPM
°C
°C
V
V
V
V
mA
mA
mA
mA
μA
No load condition, f = 100 MHz, Vdd = +2.5V, +2.8V or +3.3V
No load condition, f = 100 MHz, Vdd = +1.8V
Vdd = +2.5V, +2.8V or +3.3V, OE = GND,
output is Weakly Pulled Down
Vdd = +1.8 V. OE = GND, output is Weakly Pulled Down
Vdd = +2.5V, +2.8V or+ 3.3V,
ST
= GND,
output is Weakly Pulled Down
Vdd = +1.8 V.
ST
= GND, output is Weakly Pulled Down
f <= 165 MHz, all Vdds.
f > 165 MHz, all Vdds.
15 pF load, 10% - 90% Vdd
IOH = -6.0 mA, IOL = +6.0 mA, (Vdd = +3.3V, +2.8V, +2.5V)
IOH = -3.0 mA, IOL = +3.0 mA, (Vdd = +1.8V)
Supply voltages between +2.5V and +3.3V can be supported.
Contact
KDS
for guaranteed performance specs for supply
voltages not specified in this table.
Extended Commercial
Industrial
Inclusive of Initial tolerance at +25 °C, and variations over
operating temperature, rated power supply voltage and load
Condition
OE Disable Current
I_OD
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Daishinku Corp.
Rev. 1.1
1389 Shinzaike, Hiraoka-cho, Kakogawa, Hyogo 675-0194 Japan
+81-79-426-3211
www.kds.info
Revised June 25, 2013
MO8209
High Frequency, Ultra Performance Oscillator
Pin Configuration
Pin
Symbol
Output
Enable
1
OE/ ST
Standby
2
3
4
GND
OUT
VDD
Power
Output
Power
[2]
Functionality
H or Open : specified frequency output
L: output is high impedance. Only output driver is disabled.
H or Open
[2]
: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Electrical ground
[3]
Oscillator output
Power supply voltage
[3]
GND
2
Top View
OE/ST
1
4
VDD
3
OUT
Notes:
2. A pull-up resistor of <10 kΩ between OE/ ST pin and Vdd is recommended in high noise environment.
3. A capacitor of value 0.1 µF between Vdd and GND is recommended.
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
VDD
Electrostatic Discharge
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
Min.
-65
-0.5
–
–
–
Max.
+150
+4.0
+2000
+260
+150
Unit
°C
V
V
°C
°C
Thermal Consideration
Package
7050
5032
3225
2520
JA, 4 Layer Board
(°C/W)
191
97
109
117
JA, 2 Layer Board
(°C/W)
263
199
212
222
JC, Bottom
(°C/W)
30
24
27
26
Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev. 1.1
Page 2 of 10
www.kds.info
MO8209
High Frequency, Ultra Performance Oscillator
Timing Diagram
90% Vdd, 2.5/2,8/3.3V devices
Vdd
95% Vdd, 1.8V devices
Vdd
Pin 4 Voltage
ST Voltage
50% Vdd
NO Glitch first cycle
T_start
CLK Output
T_resume
CLK Output
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ST Mode)
Figure 5. Standby Resume Timing (ST Mode Only)
Vdd
Vdd
50% Vdd
T_OE
OE Voltage
50 % Vdd
OE Voltage
CLK Output
CLK Output
T_OE
HZ
T_OE:
Time to put the output drive in High Z mode
T_OE: Time to re-enable the clock output
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Notes:
6. MO8209 supports NO RUNT pulses and No glitches during startup or resume.
7. MO8209 supports gated output which is accurate within rated frequency stability from the first cycle.
Rev. 1.1
Page 4 of 10
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