CM150TU-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six IGBTMOD™
U-Series Module
150 Amperes/600 Volts
A
B
F
E
G
H
E
H
G
E
S
K
R 4 - Mounting
Holes
L
GuP
EuP
GvP
EvP
D
C
GwP
EwP
GuN
EuN
GvN
EvN
T
C
Measured
Point
u
v
T
C
Measured
M
Point
GwN
EwN
w
N
5 - M5 NUTS
E
H
J
E
J
H
E
K
0.110 - 0.5 Tab
P
Q
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM150TU-12H is a
600V (V
CES
), 150 Ampere Six-
IGBT IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
150
V
CES
Volts (x 50)
12
P
GuP
EuP
U
GvP
EvP
V
GwP
EwP
W
GuN
EuN
N
GvN
EvN
GwN
EwN
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
4.21
3.54±0.01
4.02
3.15±0.01
0.43
0.91
0.47
0.85
0.91
Millimeters
107.0
90.0±0.25
102.0
80.0±0.25
11.0
23.0
12.0
21.7
23.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.15
0.67
1.91
0.03
0.32
1.02
0.22 Dia.
0.57
Millimeters
3.75
17.0
48.5
0.8
8.1
26.0
5.5 Dia.
14.4
85
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150TU-12H
Six IGBTMOD™ U-Series Module
150 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (T
j
< 150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM150TU-12H
-40 to 150
-40 to 125
600
±20
150
300*
150
300*
600
31
31
680
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 15mA, V
CE
= 10V
I
C
= 150A, V
GE
= 15V, T
j
= 25°C
I
C
= 150A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage*
V
CC
= 300V, I
C
= 150A, V
GE
= 15V
I
E
= 150A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6
2.4
2.6
300
–
Max.
1
0.5
7.5
3.0
–
–
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 300V, I
C
= 150A,
V
GE1
= V
GE2
= 15V,
R
G
= 4.2 , Resistive
Load Switching Operation
I
E
= 150A, di
E
/dt = -300A/µs
I
E
= 150A, di
E
/dt = -300A/µs
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.36
Max.
13.2
7.2
2
100
350
300
300
160
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Test Conditions
Per IGBT 1/6 Module
Per Free-Wheel Diode 1/6 Module
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
0.015
Max.
0.21
0.47
–
Units
°C/W
°C/W
°C/W
86
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150TU-12H
Six IGBTMOD™ U-Series Module
150 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
300
COLLECTOR CURRENT, I
C
, (AMPERES)
240
180
V
GE
= 20V
12
COLLECTOR CURRENT, I
C
, (AMPERES)
14
240
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
T
j
= 25
o
C
15
13
300
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
4
3
2
1
180
11
120
10
120
60
0
60
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
0
60
120
180
240
300
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
10
2
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
V
GE
= 0V
f = 1MHz
8
I
C
= 300A
EMITTER CURRENT, I
E
, (AMPERES)
10
1
6
I
C
= 150A
C
ies
10
2
4
2
I
C
= 60A
10
0
C
oes
C
res
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
0
0.6
1.0
1.4
1.8
2.2
2.6
3.0
10
-1
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
di/dt = -300A/µsec
T
j
= 25°C
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
4
t
f
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 150A
16
12
8
4
SWITCHING TIME, (ns)
10
3
t
d(on)
t
r
t
d(off)
V
CC
= 200V
V
CC
= 300V
10
2
t
rr
I
rr
10
1
10
2
V
CC
= 300V
V
GE
=
±15V
R
G
= 4.2
Ω
T
j
= 125°C
10
1
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
1
10
0
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
100
200
300
400
GATE CHARGE, Q
G
, (nC)
87
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150TU-12H
Six IGBTMOD™ U-Series Module
150 Amperes/600 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
10
-2
10
-1
10
0
10
1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-3
10
1
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.21°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.47°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
88
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