Datasheet> 器件分类 > 半导体> 分立半导体> BCR 162 B6327

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BCR 162 B6327: 产品描述trans prebias pnp 200mw sot23-3; 产品类别半导体分立半导体; 文件大小808KB，共6页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/; 标准

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BCR 162 B6327概述

trans prebias pnp 200mw sot23-3

BCR 162 B6327规格参数

参数名称	属性值
Datasheets
BCR162
Product Photos
SOT-23-3
PCN Obsolescence/ EOL
Multiple Devices 27/Jul/2010
Standard Package	30,000
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single, Pre-Biased
系列 Packaging	Tape & Reel (TR)
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transiti	200MHz
Power - Max	200mW
Mounting Type	Surface Mou
封装 / 箱体 Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	PG-SOT23-3
Other Names	BCR162B6327XTSP000056352

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BCR162

PNP Silicon Digital Transistor

•

Switching circuit, inverter, interface circuit,

driver circuit

•

Built in bias resistor

= 4.7kΩ ,

= 4.7kΩ )

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

BCR162

EHA07183

Type

BCR162

Marking

WUs

1=B

Pin Configuration

2=E

2=C

Package

SOT23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Input forward voltage

Input reverse voltage

Collector current

Total power dissipation-

≤

102°C

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

stg

Symbol

thJS

150

-65 ... 150

Value

≤

240

Unit

K/W

°C

Symbol

CEO

CBO

i(fwd)

i(rev)

tot

Value

100

200

Unit

2011-08-29

BCR 162 B6327相似产品对比

	BCR 162 B6327	BCR 162F E6327
描述	trans prebias pnp 200mw sot23-3	trans prebias pnp 250mw tsfp-3
Standard Package	30,000	3,000
Category	Discrete Semiconductor Products	Discrete Semiconductor Products
Family	Transistors (BJT) - Single, Pre-Biased	Transistors (BJT) - Single, Pre-Biased
系列 Packaging	Tape & Reel (TR)	Tape & Reel (TR)
Transistor Type	PNP - Pre-Biased	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100mA	100mA
Voltage - Collector Emitter Breakdown (Max)	50V	50V
Resistor - Base (R1) (Ohms)	4.7k	4.7k
Resistor - Emitter Base (R2) (Ohms)	4.7k	4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5mA, 5V	20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)
Frequency - Transiti	200MHz	200MHz
Power - Max	200mW	200mW
Mounting Type	Surface Mou	Surface Mou
封装 / 箱体 Package / Case	TO-236-3, SC-59, SOT-23-3	SOT-723
Supplier Device Package	PG-SOT23-3	PG-TSFP-3
Other Names	BCR162B6327XTSP000056352	BCR162FE6327XTSP000014445

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