IRGR4045DPbF
INSULATED GATE BIPOLAR TRANSISTOR
WITH
ULTRAFAST SOFT RECOVERY DIODE
C
V
CES
= 600V
I
C
½
6.0A, T
C
= 100°C
Features
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
G
E
T
jmax
= 175°C
n-channel
C
V
CE(on) typ.
½
1.7V
E
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
G
D-Pak
IRGR4045DPbF
G
Gate
C
Colletor
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@T
C
=25°C
I
F
@T
C
=100°C
I
FM
V
GE
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
300 (0.063 in. (1.6mm) from case)
Units
V
c
A
d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
V
W
°C
Thermal Resistance
Parameter
R
JC
R
JC
R
JA
R
JA
Junction-to-Case - IGBT
Junction-to-Case - Diode
e
e
Min.
–––
Typ.
–––
–––
–––
–––
Max.
1.9
6.8
50
110
Units
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
g
–––
–––
–––
*Qualification
standards can be found at http://www.irf.com/
1
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October 10, 2012
IRGR4045DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
V
(BR)CE S
/
T
J
Min. Typ. Max. Units
600
—
—
—
—
3.5
—
—
—
—
—
—
—
—
0.36
1.7
2.07
2.14
—
-13
5.8
—
—
1.60
1.30
—
—
—
2.0
—
—
6.5
—
—
25
250
2.30
—
±100
nA
V
V
S
μA
V
V
Conditions
V
GE
= 0V, I
c
=100
μA
Colle
ctor-to-Em
itter Brea ow Volta e
kd n
g
T empera
ture Coeff. of B rea ow Voltage
kd n
o
V/°C V
GE
= 0V, I
c
= 250μA ( 25 -175 C )
f
R ef . F i g
f
CT 6
V
CE(on)
V
GE(th)
V
GE (th)
/
T J
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
I
C
= 6.0A, V
GE
= 15V, T
J
= 25°C
I
C
= 6.0A, V
GE
= 15V, T
J
= 150°C
I
C
= 6.0A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 150μA
V
CE
= 25V, I
C
= 6.0A, PW =80
s
V
GE
= 0V,V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
=175°C
I
F
= 6.0A
I
F
= 6.0A, T
J
= 175°C
V
GE
= ± 20 V
5,6,7,9,
10 ,11
9,10,11,12
o
mV/°C V
CE
= V
GE
, I
C
= 250μA ( 25 -175 C )
gfe
I
CES
V
FM
I
GES
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min. Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
3.1
6.4
56
122
178
27
11
75
17
140
189
329
26
12
95
32
350
29
10
19.5
4.65
9.6
86
143
229
35
15
93
22
—
—
—
—
—
—
—
—
—
—
h
Units
nC
Conditions
I
C
= 6.0A
V
CC
= 400V
V
GE
= 15V
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
R ef . F i g
24
CT 1
μJ
R
G
= 47, L=1mH, L
S
= 150nH, T
J
= 25°C
E nergy los s es include tail and diode revers e recovery
CT 4
I
C
= 6.0A, V
CC
= 400V
ns
R
G
= 47, L=1mH, L
S
= 150nH
T
J
= 25°C
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 47, L=1mH, L
S
= 150nH, T
J
= 175°C
E nergy los s es include tail and diode revers e recovery
13,1
5
CT 4
WF 1,WF 2
14,16
CT 4
WF 1,WF 2
CT 4
I
C
= 6.0A, V
CC
= 400V
ns
R
G
= 47, L=1mH, L
S
= 150nH
T
J
= 175°C
V
GE
= 0V
pF
V
CC
= 30V
f = 1Mhz
T
J
= 175°C, I
C
= 24A
23
4
CT 2
FULL SQUARE
V
CC
= 500V, Vp =600V
R
G
= 100, V
GE
= +20V to 0V
V
CC
= 400V, Vp =600V
R
G
= 100, V
GE
= +15V to 0V
T
J
= 175 C
V
CC
= 400V, I
F
= 6.0A
V
GE
= 15V, Rg = 47, L=1mH, L
S
=150nH
o
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
—
—
—
—
5
178
74
12
—
—
—
—
μs
μJ
ns
A
22
CT 3, WF 4
17,18,1
9
20,21
WF 3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 1.0mH, R
G
= 47
Pulse width limited by max. junction temperature.
R
is measured at T
J
approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Maximum limits are based on statistical sample size characterization.
2
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IRGR4045DPbF
14
12
10
80
70
60
50
Ptot (W)
0
20
40
60
80 100 120 140 160 180
T C (°C)
IC (A)
8
6
4
2
0
40
30
20
10
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
Fig. 2
- Power Dissipation vs. Case
Temperature
100
10μsec
10
100μsec
10
IC (A)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
IC A)
1
0
100
VCE (V)
1000
10
100
VCE (V)
1000
Fig. 3
- Forward SOA,
T
C
= 25°C, T
J
175°C, V
GE
= 15V
20
20
Fig. 4
- Reverse Bias SOA
T
J
= 175°C, V
GE
= 20V
15
Top
ICE (A)
ICE (A)
10
V
= 10V
GE
Bottom VGE = 8.0V
V
= 18V
GE
V
= 15V
GE
VGE = 12V
15
Top
10
Bottom
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
5
5
0
0
2
4
6
8
10
0
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
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3
IRGR4045DPbF
20
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
20
18
16
14
12
IF (A)
15
Bottom
-40°C
25°C
175°C
ICE (A)
10
10
8
5
6
4
2
0
0
2
4
6
8
10
0
0.0
1.0
VF (V)
2.0
3.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
10
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
10
8
8
VCE (V)
ICE = 6.0A
4
ICE = 12A
VCE (V)
6
ICE = 3.0A
6
ICE = 3.0A
4
ICE = 6.0A
ICE = 12A
2
2
0
5
10
VGE (V)
15
20
0
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
10
IC, Collector-to-Emitter Current (A)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
18
16
14
12
10
8
6
4
2
0
4
6
8
10
12
14
16
T J = 25°C
8
ICE = 3.0A
ICE = 6.0A
ICE = 12A
4
T J = 175°C
VCE (V)
6
2
0
5
10
VGE (V)
15
20
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
4
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IRGR4045DPbF
400
350
Swiching Time (ns)
1000
300
tdOFF
100
tF
10
tdON
tR
Energy (μJ)
250
200
150
100
50
0
2
4
6
8
10
12
14
EON
EOFF
1
2
4
6
8
IC (A)
10
12
14
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 1mH; V
CE
= 400V, R
G
= 47; V
GE
= 15V.
220
200
180
EOFF
IC (A)
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L=1mH; V
CE
= 400V
R
G
= 47; V
GE
= 15V
1000
Swiching Time (ns)
Energy (μJ)
160
140
120
100
80
60
0
25
50
75
100
125
EON
100
tdOFF
tF
tdON
tR
10
1
0
25
50
75
100
125
RG ()
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 1mH; V
CE
= 400V, I
CE
= 6.0A; V
GE
= 15V
30
25
RG = 10
20
22
20
18
16
Rg ()
Fig. 16-
Typ. Switching Time vs. R
G
T
J
= 175°C; L=1mH; V
CE
= 400V
I
CE
= 6.0A; V
GE
= 15V
IRR (A)
IRR (A)
15
10
5
0
2
4
6
8
IF (A)
RG = 22
RG = 47
RG = 100
14
12
10
8
6
10
12
14
0
25
50
75
100
125
RG (
Fig. 17
- Typical Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typical Diode I
RR
vs. R
G
T
J
= 175°C; I
F
= 6.0A
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5
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