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t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
115
140
60
Maximum
140
175
75
°C/W
Unit
Document Number: 72152
S-80642-Rev. C, 24-Mar-08
www.vishay.com
1
Si2331DS
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
b
Turn-On Time
Turn-Off Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 6 V, R
L
= 6
Ω
I
D
≅
- 1.0 A, V
GEN
= - 4.5 V
R
G
= 6
Ω
20
35
65
50
30
55
100
75
ns
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 6 V, V
GS
= - 4.5 V
I
D
≅
- 3.6 A
9
1.3
2.5
780
290
210
pF
14
nC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= - 10 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
=
- 4.5 V, I
D
= - 3.6 A
V
GS
= - 2.5 V, I
D
= - 3.2 A
V
GS
= - 1.8 V, I
D
= - 2.7 A
V
DS
= - 5 V, I
D
= - 3.6 A
I
S
= - 1.6 A, V
GS
= 0 V
-6
0.038
0.049
0.070
3
- 1.2
0.048
0.062
0.090
S
V
Ω
- 12
- 0.45
- 0.90
± 100
-1
- 10
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
≤
300 µs duty cycle
≤
2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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