PD- 94077
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies
8-40 kHz in hard switching, >200kHz in resonant
mode
• Generation 4 IGBT design provides tighter para-
meter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard D
2
Pak package
C
UltraFast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.85V
@V
GE
= 15V, I
C
= 6.5A
N-channel
Benefits
• Generation 4 IGBTs offers highest efficiencies
available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
D
2
Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
13
6.5
52
52
7.0
52
± 20
60
24
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.5
–––
1.44
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
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1
1/12/01
IRG4BC20UD-S
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆
V
(BR)CES
/∆T
J
V
CE(on)
Parameter
Min.
Collector-to-Emitter Breakdown Voltage 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage –––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
1.4
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
Typ. Max. Units
––– –––
V
0.69 ––– V/°C
1.85 2.1
2.27 –––
V
1.87 –––
––– 6.0
-11 ––– mV/°C
4.3 –––
S
––– 250
µA
––– 1700
1.4 1.7
V
1.3 1.6
––– ±100 nA
Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 6.5A
V
GE
= 15V
I
C
= 13A
See Fig. 2, 5
I
C
= 6.5A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
V
CE
= V
GE
, I
C
= 250µA
V
CE
= 100V, I
C
= 6.5A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 8.0A
See Fig. 13
I
C
= 8.0A, T
J
= 150°C
V
GE
= ±20V
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
27
4.5
10
39
15
93
110
0.16
0.13
0.29
38
17
100
220
0.49
7.5
530
39
7.4
37
55
3.5
4.5
65
124
240
210
Max. Units
Conditions
41
I
C
= 6.5A
6.8
nC
V
CC
= 400V
See Fig. 8
16
V
GE
= 15V
–––
T
J
= 25°C
–––
ns
I
C
= 6.5A, V
CC
= 480V
140
V
GE
= 15V, R
G
= 50Ω
170
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ See Fig. 9, 10, 11, 18
0.3
–––
T
J
= 150°C, See Fig. 9, 10, 11, 18
–––
ns
I
C
= 6.5A, V
CC
= 480V
–––
V
GE
= 15V, R
G
= 50Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
–––
nH
Measured 5mm from package
–––
V
GE
= 0V
–––
pF
V
CC
= 30V
See Fig. 7
–––
ƒ = 1.0MHz
55
ns
T
J
= 25°C See Fig.
90
T
J
= 125°C
14
I
F
= 8.0A
5.0
A
T
J
= 25°C See Fig.
8.0
T
J
= 125°C
15
V
R
= 200V
138
nC
T
J
= 25°C See Fig.
360
T
J
= 125°C
16
di/dt 200A/µs
––– A/µs T
J
= 25°C See Fig.
–––
T
J
= 125°C
17
2
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IRG4BC20UD-S
12
D u ty c y c le : 5 0 %
T J = 1 2 5 °C
T s in k = 9 0 °C
G a te d riv e a s s p e c ifie d
T u rn -o n los s e s in c lu d e
e ffe c ts o f re v e rs e r e c o v e ry
P ow er Diss ip ation = 13W
10
L oa d C u rre n t (A )
8
6
6 0% o f ra te d
v oltag e
4
2
0
0.1
1
10
A
100
f, F re q u e n c y (k H z )
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
T
J
= 25°C
T
J
= 150°C
10
I
C
, C ollec tor-to-E m itte r C u rre nt (A )
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 1 5 0°C
T
J
= 25 °C
1
1
0.1
0.1
1
V
G E
= 15V
20µs PULSE WIDTH
10
0.1
4
6
8
V
C C
= 10 V
5 µs P U L S E W IDTH
10
A
12
V
C E
, Collector-to-Emitter Voltage (V)
V
G E
, Ga te -to-Em itter Volta ge (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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A
3
IRG4BC20UD-S
14
M aximum D C Collector Current (A )
12
V
C E
, C ollector-to-E m itter V oltag e (V)
V
G E
= 15 V
2.6
V
G E
= 1 5V
8 0 µs P U L S E W ID TH
I
C
= 1 3A
2.2
10
8
1.8
I
C
= 6 .5A
6
4
1.4
I
C
= 3.3 A
2
0
25
50
75
100
125
150
1.0
-60
-40
-20
0
20
40
60
80
100 120
A
140 160
T
C
, C ase Tem perature (°C)
T
J
, J u n c tio n Te m p e ra tu re (°C )
Fig. 4
- Maximum Collector Current vs.
Case Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Therm al Response (Z
thJ C
)
1
D = 0.50
0 .2 0
0 .10
0.0 5
P
D M
0 .1
0.0 2
0 .01
t
SIN G LE P U LS E
(T H ER M AL R E SP O N SE )
N o te s :
1 . D u ty fa c to r D = t
1
/ t
2
1
t2
0 .0 1
0 .0 0 0 0 1
2 . P e a k T
J
= P
D M
x Z
th J C
+ T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t
1
, R ectangular Pulse Duration (sec)
Fig. 6
- Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20UD-S
1000
V
G E
, G a te -to -E m itte r V o lta g e (V )
A
C, Ca pac itanc e (p F)
800
V
GE
=
C
ie s
=
C
re s
=
C
oes
=
0V ,
f = 1M H z
C
g e
+ C
g c
, C
ce
S H O R TE D
C
gc
C
ce
+ C
g c
20
V
CE
= 400V
I
C
= 6 .5 A
16
C
ie s
600
12
C
oes
400
8
200
C
re s
4
0
1
10
0
0
5
10
15
20
25
A
30
100
V
C E
, C o lle c to r-to -E m itte r V o lta g e (V )
Q
g
, T o ta l G a te C h a rg e (n C )
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.32
Total Switching Losses (m J)
0.31
Total S witching Los se s (m J)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 25 °C
= 6 .5A
10
R
G
= 50
Ω
V
GE
= 15V
V
CC
= 4 8 0 V
I
C
= 1 3 A
1
I
C
= 6 .5 A
0.30
I
C
= 3 .3 A
0.29
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
A
160
R
G
, G a te R e sista n c e (
Ω)
T
J
, J u n ctio n T e m p e ra tu re (°C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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