电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索
 PDF数据手册

BSS159N E6906

产品描述mosfet N-CH 60v 230ma sot-23
产品类别半导体    分立半导体   
文件大小306KB,共9页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
标准  
下载文档 详细参数 选型对比 全文预览

BSS159N E6906概述

mosfet N-CH 60v 230ma sot-23

BSS159N E6906规格参数

参数名称属性值
Datasheets
BSS159N
Product Photos
SOT-23-3
PCN Obsolescence/ EOL
Multiple Devices 28/Mar/2008
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
系列
Packaging
Tape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureDepletion Mode
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C230mA (Ta)
Rds On (Max) @ Id, Vgs3.5 Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id2.4V @ 26µA
Gate Charge (Qg) @ Vgs2.9nC @ 5V
Input Capacitance (Ciss) @ Vds44pF @ 25V
Power - Max360mW
Mounting TypeSurface Mou
封装 / 箱体
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23-3
Other NamesBSS159NE6906XTSP000055412

BSS159N E6906相似产品对比

BSS159N E6906 BSS159L6327 BSS159L6906 BSS159NH6327XTSA1 BSS159NL6906HTSA1 BSS159N E6327 BSS159NL6327HTSA1
描述 mosfet N-CH 60v 230ma sot-23 Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 MOSFET N-CH 60V 230MA SOT23 MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23
包装说明 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - -
Reach Compliance Code - compliant compliant compliant compliant - -
ECCN代码 - EAR99 EAR99 EAR99 EAR99 - -
配置 - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - -
最小漏源击穿电压 - 60 V 60 V 60 V 60 V - -
最大漏极电流 (ID) - 0.23 A 0.23 A 0.23 A 0.23 A - -
最大漏源导通电阻 - 3.5 Ω 3.5 Ω 3.5 Ω 3.5 Ω - -
FET 技术 - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - -
最大反馈电容 (Crss) - 5.9 pF 5.9 pF 5.9 pF 5 pF - -
JESD-30 代码 - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 - -
元件数量 - 1 1 1 1 - -
端子数量 - 3 3 3 3 - -
工作模式 - DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE - -
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
封装形式 - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - -
极性/信道类型 - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL - -
表面贴装 - YES YES YES YES - -
端子形式 - GULL WING GULL WING GULL WING GULL WING - -
端子位置 - DUAL DUAL DUAL DUAL - -
晶体管元件材料 - SILICON SILICON SILICON SILICON - -

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 国产芯 大学堂 TI培训 Datasheet 电子工程 索引文件: 89  218  338  487  1355 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved