MOSFET N-CH 60V 230MA SOT23
| 参数名称 | 属性值 |
| 厂商名称 | Infineon(英飞凌) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (ID) | 0.23 A |
| 最大漏源导通电阻 | 3.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 5.9 pF |
| JESD-30 代码 | R-PDSO-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | DEPLETION MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| BSS159NH6327XTSA1 | BSS159N E6906 | BSS159L6327 | BSS159L6906 | BSS159NL6906HTSA1 | BSS159N E6327 | BSS159NL6327HTSA1 | |
|---|---|---|---|---|---|---|---|
| 描述 | MOSFET N-CH 60V 230MA SOT23 | mosfet N-CH 60v 230ma sot-23 | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | MOSFET N-CH 60V 230MA SOT-23 | MOSFET N-CH 60V 230MA SOT-23 | MOSFET N-CH 60V 230MA SOT-23 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | - | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | - | - |
| Reach Compliance Code | compliant | - | compliant | compliant | compliant | - | - |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | - | - |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | - |
| 最小漏源击穿电压 | 60 V | - | 60 V | 60 V | 60 V | - | - |
| 最大漏极电流 (ID) | 0.23 A | - | 0.23 A | 0.23 A | 0.23 A | - | - |
| 最大漏源导通电阻 | 3.5 Ω | - | 3.5 Ω | 3.5 Ω | 3.5 Ω | - | - |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - |
| 最大反馈电容 (Crss) | 5.9 pF | - | 5.9 pF | 5.9 pF | 5 pF | - | - |
| JESD-30 代码 | R-PDSO-G3 | - | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | - | - |
| 元件数量 | 1 | - | 1 | 1 | 1 | - | - |
| 端子数量 | 3 | - | 3 | 3 | 3 | - | - |
| 工作模式 | DEPLETION MODE | - | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | - | - |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - | - |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | - |
| 表面贴装 | YES | - | YES | YES | YES | - | - |
| 端子形式 | GULL WING | - | GULL WING | GULL WING | GULL WING | - | - |
| 端子位置 | DUAL | - | DUAL | DUAL | DUAL | - | - |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | - | - |
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