V59C1512(804/164)QE
HIGH PERFORMANCE 512 Mbit DDR2 SDRAM
4 BANKS X 16Mbit X 8 (804)
4 BANKS X 8Mbit X 16 (164)
37
DDR2-533
Clock Cycle Time (t
CK3
)
Clock Cycle Time (t
CK4
)
Clock Cycle Time (t
CK5
)
Clock Cycle Time (t
CK6
)
Clock Cycle Time (t
CK7
)
System Frequency (f
CK max
)
5ns
3.75ns
-
-
-
266 MHz
3
DDR2-667
5ns
3.75ns
3ns
-
-
333 MHz
25A
DDR2-800
5ns
3.75ns
3ns
2.5ns
-
400 MHz
25
DDR2-800
5ns
3.75ns
2.5ns
2.5ns
-
400 MHz
PRELIMINARY
19A
DDR2-1066
5ns
3.75ns
2.5ns
2.5ns
1.87ns
533 MHz
Features
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Description
The V59C1512(804/164)QE is a four bank DDR DRAM
organized as 4 banks x 16Mbit x 8 (804) or 4 banks x 8Mbit
x 16 (164). The V59C1512(804/164)QE achieves high
speed data transfer rates by employing a chip architec-
ture that prefetches multiple bits and then synchronizes
the output data to a system clock.
The chip is designed to comply with the following key
DDR2 SDRAM features:(1) posted CAS with additive la-
tency, (2) write latency = read latency -1, (3) On Die Ter-
mination.
All of the control, address, circuits are synchronized
with the positive edge of an externally supplied clock. I/O
s are synchronized with a pair of bidirectional strobes
(DQS, DQS) in a source synchronous fashion.
Operating the four memory banks in an interleaved
fashion allows random access operation to occur at a
higher rate than is possible with standard DRAMs. A se-
quential and gapless data rate is possible depending on
burst length, CAS latency and speed grade of the device.
Available Speed Grade:
-37 (DDR2-533) @ CL 4-4-4
-3 (DDR2-667) @ CL 5-5-5
-25A (DDR2-800) @ CL 6-6-6
-25 (DDR2-800) @ CL 5-5-5
-19A(DDR2-1066)@CL 7-7-7
High speed data transfer rates with system frequency
up to 533MHz
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6 and 7
Programmable Additive Latency:0, 1, 2, 3, 4, 5 and 6
Write Latency = Read Latency -1
Programmable Wrap Sequence: Sequential
or Interleave
Programmable Burst Length: 4 and 8
Automatic and Controlled Precharge Command
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 7.8 us at lower than Tcase 85
o
C,
3.9 us at 85
o
C < Tcase
≤
95
o
C
ODT (On-Die Termination)
Weak Strength Data-Output Driver Option
Bidirectional differential Data Strobe (Single-ended
data-strobe is an optional feature)
On-Chip DLL aligns DQ and DQs transitions with CK
transitions
Differential clock inputs CK and CK
JEDEC Power Supply 1.8V ± 0.1V
Available in 60-ball FBGA for x8 component or 84 ball
FBGA for x16 component
All inputs & outputs are compatible with SSTL_18 in-
terface
tRAS lockout supported
Read Data Strobe supported (x8 only)
Internal four bank operations with single pulsed RAS
Device Usage Chart
Operating
Temperature
Range
0°C
≤
Tc
≤
95°C
-40°C
≤
Tc
≤
95°C
-40°C
≤
Tc
≤
105°C
V59C1512(804/164)QE Rev. 1.2 January 2015
Package Outline
60 ball FBGA
84 ball FBGA
•
•
•
CK Cycle Time (ns)
-37
•
•
•
Power
-19A
•
•
•
-3
•
•
•
-25A
•
•
•
-25
•
•
•
Std.
•
•
•
L
•
•
•
Temperature
Mark
Blank
I
H
1
ProMOS TECHNOLOGIES
Part Number Information
1
2
3
4
5
6
7
8
9 10
11
12
13
14
V59C1512(804/164)QE
15
16 17 18
19
V
ProMOS
5 9
C
1
5 1 2 8 0
ORGANIZATION
& REFRESH
64Mx4, 8K : 25640
32Mx8, 8K : 25680
128Mx4, 8K : 51240
64Mx8, 8K : 51280
32Mx16, 8K : 51216
64Mx16, 8K : G0116
16Mx16, 8K : 25616
4
Q
E
J
2 5
TEMPERATURE
BLANK:
0 - 95 C
TYPE
59 : DDR2
CMOS
256Mx4, 8K : G0140
128Mx8, 8K : G0180
M:
I:
H:
E:
SPEED
-25 - 95 C
-40 - 95 C
-40 - 105 C
-40 - 125 C
VOLTAGE
1:
1.8 V
BANKS
4 : 4 BANKS
8 : 8 BANKS
I/O
Q: SSTL_18
REV CODE
37 : 266MHz @CL4-4-4
3 : 333MHz @CL5-5-5
25 : 400MHz @CL5-5-5
25A : 400MHz @CL6-6-6
19A : 533MHz @CL7-7-7
SPECIAL FEATURE
L : LOW POWER GRADE
U : ULTRA LOW POWER GRADE
PACKAGE
RoHS Green
F
J
P
PACKAGE
DESCRIPTION
FBGA
Die-stacked FBGA
*RoHS: Restriction of Hazardous Substances
*GREEN: RoHS-compliant and Halogen-Free
512M DDR2 SDRAM Addressing
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
64Mb x 8
4
BA0, BA1
A10/AP
A0 ~ A13
A0 ~ A9
32Mb x 16
4
BA0, BA1
A10/AP
A0 ~ A12
A0 ~ A9
V59C1512(804/164)QE Rev. 1.2 January 2015
2
ProMOS TECHNOLOGIES
V59C1512(804/164)QE
V59C1512(804/164)QE Rev. 1.2 January 2015
3
ProMOS TECHNOLOGIES
V59C1512(804/164)QE
V59C1512(804/164)QE Rev. 1.2 January 2015
4
ProMOS TECHNOLOGIES
V59C1512(804/164)QE
Signal Pin Description
Pin
CK, CK
CKE
CS
RAS, CAS, WE
A0 - A13
Type
Input
Input
Input
Input
Input
Function
The system clock input. All inputs except DQs and DMs are sampled on the rising edge of CK.
Activates the CK signal when high and deactivates the CK signal when low, thereby initiates either the
Power Down mode, or the Self Refresh mode.
CS enables the command decoder when low and disables the command decoder when high. When
the command decoder is disabled, new commands are ignored but previous operations continue.
When sampled at the positive rising edge of the clock, CAS, RAS, and WE define the command to be
executed by the SDRAM.
During a Bank Activate command cycle, A0-A13 defines the row address ( RA0-RA13 ) when sampled
at the rising clock edge for x8 and A0-A12 row address for x16 device.
During a Read or Write command cycle, A0-An defines the column address ( CA0-CAn ) when sampled
at the rising clock edge.CAn depends on the SDRAM organization:
64M x 8 DDR CAn = CA9
32M x 16 DDR CAn = CA9
In addition to the column address, A10 ( = AP ) is used to invoke autoprecharge operation at the end
of the burst read or write cycle. If A10 is high, autoprecharge is selected and BA0, BA1 defines the
bank to be precharged. If A10 is low, autoprecharge is disabled.
During a Precharge command cycle, A10 ( = AP ) is used in conjunction with BA0 and BA1 to control
which bank(s) to precharge. If A10 is high, all four banks will be precharged simultaneously regardless
of state of BA0 and BA1.
BA0, BA1
DQx
DQS, (DQS)
LDQS, (LDQS)
UDQS, (UDQS)
RDQS, (RDQS)
Input
Input/
Output
Input/
Output
Selects which bank is to be active.
Data Input/Output pins operate in the same manner as on conventional DRAMs.
DQ0-DQ7 for x8 component and DQ0-DQ15 for x16 component.
Data Strobe, output with read data, input with write data. Edge-aligned with read data, centered in write
data. For x16 device, LDQS corresponds to the data on DQ0-DQ7; UDQS coresponds to the data on
DQ8-DQ15. For x8 device, an RDQS option using DM pin can be enabled via the EMRS(1) to simplify
read timing. The data strobes DQS, LDQS, UDQS, and RDQS may be used in single ended mode or
paired with optional complimentary signals DQS, LDQS, UDQS, and RDQS to provide differential pair
signaling to the system during both reads and writes. An EMRS(1) control bit enables or disables all
complementary data strobe signals.
In this data sheet, “differential DQS signals” refers to any of the following with A10 = 0 of EMRS(1)
x8 DQS/DQS if EMRS(1)[A11] = 0
x8 DQS/DQS, RDQS/RDQS if EMRS(1)[A11] = 1
x16 LDQS/LDQS and UDQS/UDQS
“single-ended DQS signals” refers to any of the following with A10 = 1 of EMRS(1)
x8 DQS if EMRS(1)[A11] = 0
x8 DQS, RDQS, if EMRS(1)[A11] = 1
x16LDQS and UDQS
V59C1512(804/164)QE Rev. 1.2 January 2015
5
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