PD- 93929
PROVISIONAL
IRFBL17N50L
HEXFET
®
Power MOSFET
SMPS MOSFET
Applications
l
Telecom and Data-Com off-Line SMPS
l
Motor Control
l
UninterruptIble Power Supply
Benefits
l
Low On-Resistance
l
High Speed Switching
l
Low Gate Drive Current Due to Improved
Gate Charge Characteristics
l
Built in Fast Recovery Diode
l
Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
V
DSS
500V
R
DS(on)
0.28Ω
I
D
17A
Super D
2
pak
TM
Max.
17
10
68
200
1.6
± 30
5.0
-55 to + 150
260
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
17
––– –––
showing the
A
G
integral reverse
––– –––
68
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
––– 180 –––
ns
T
J
= 125°C, I
F
= 17A
––– 420 –––
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Typical SMPS Topologies
l
Zero Voltage Switching Full and Half Bridge Circuits
www.irf.com
1
6/2/00
IRFB17N50L
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
PROVISIONAL
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.55 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.28
Ω
V
GS
= 10V, I
D
= 10A
3.5
––– 5.5
V
V
DS
= V
GS
, I
D
= 250µA
––– ––– 50
µA V
DS
= 500V, V
GS
= 0V
––– ––– 2.0
mA V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
––– ––– 100
V
GS
= 30V
nA
––– ––– -100
V
GS
= -30V
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
7.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
20
55
45
45
3000
300
20
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 10A
110
I
D
= 17A
40
nC V
DS
= 400V
50
V
GS
= 10V,
–––
V
DD
= 250V
–––
I
D
= 17A
ns
–––
R
G
= 9.0Ω
–––
V
GS
= 10V,
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
430
17
20
Units
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted, steady-state)
Typ.
–––
–––
Max.
0.63
40
Units
°C/W
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
Starting T
J
= 25°C, L = 5.0mH, R
G
= 25Ω,
I
AS
= 17A,
I
SD
≤
17A, di/dt
≤
TBDA/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
2
www.irf.com
PROVISIONAL
IRFB17N50L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10 .54 (.4 15)
10 .29 (.4 05)
3 .7 8 (.149 )
3 .5 4 (.139 )
-A -
6.47 (.25 5)
6.10 (.24 0)
-B -
4.69 ( .18 5 )
4.20 ( .16 5 )
1 .32 (.05 2)
1 .22 (.04 8)
2.87 (.11 3)
2.62 (.10 3)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
3
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
1 .4 0 (.0 55 )
3X
1 .1 5 (.0 45 )
2.54 (.10 0)
2X
N O TE S :
0.93 (.03 7)
0.69 (.02 7)
M
B A M
3X
0.55 (.02 2)
0.46 (.01 8)
0 .3 6 (.01 4)
2 .92 (.11 5)
2 .64 (.10 4)
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
TO-220AB Part Marking Information
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN TE R N A TIO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CO DE
PART NU MBER
IR F 10 1 0
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16
Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
www.irf.com
3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
