Datasheet> 器件分类 > 半导体> 分立半导体> RN2109(T5L,F,T)

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RN2109(T5L,F,T): 产品描述tran pnp ssm -50v -100a; 产品类别半导体分立半导体; 文件大小352KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN2109(T5L,F,T)概述

tran pnp ssm -50v -100a

RN2109(T5L,F,T)规格参数

参数名称	属性值
Datasheets
RN2107-09
Product Photos
SC-75, SOT-416
Standard Package	3,000
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single, Pre-Biased
系列 Packaging	Tape & Reel (TR)
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	47k
Resistor - Emitter Base (R2) (Ohms)	22k
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transiti	200MHz
Power - Max	100mW
Mounting Type	Surface Mou
封装 / 箱体 Package / Case	SC-75, SOT-416
Supplier Device Package	SSM
Other Names	RN2109(T5LFT)TR

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RN2107∼RN2109

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2107, RN2108, RN2109

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Built-in bias resistors

Simplified circuit design

Fewer parts and simplified manufacturing process

Complementary to RN1107 to RN1109

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2107

RN2108

RN2109

R1 (kΩ)

R2 (kΩ)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2107 to 2109

RN2107

Emitter-base voltage

RN2108

RN2109

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2107 to 2109

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−100

100

150

−55

to 150

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

Start of commercial production

1990-12

2014-03-01

RN2109(T5L,F,T)相似产品对比

	RN2109(T5L,F,T)	RN2107MFV(TPL3)	RN2107(T5L,F,T)	RN2109MFV(TPL3)	RN2108MFV(TPL3)	RN2107,LF(CB	RN2108(T5L,F,T)	RN2108,LF(CT	RN2107(T5L,PP,F)	RN2109,LF(CT
描述	tran pnp ssm -50v -100a	trans prebias pnp 150mw vesm	tran pnp ssm -50v -100a	trans prebias pnp 150mw vesm	trans prebias pnp 150mw vesm	TRANS PREBIAS PNP 50V 0.1W SSM	TRANS PREBIAS PNP 0.1W SSM	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor
Reach Compliance Code	-	unknow	-	unknown	unknown	-	-	unknown	unknown	unknown

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