Datasheet> 器件分类 > 分立半导体> 晶体管> RN2107(T5L,PP,F)

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RN2107(T5L,PP,F): 产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon; 产品类别分立半导体晶体管; 文件大小352KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2107(T5L,PP,F)概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

RN2107(T5L,PP,F)规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 4.7
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz

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RN2107∼RN2109

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2107, RN2108, RN2109

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Built-in bias resistors

Simplified circuit design

Fewer parts and simplified manufacturing process

Complementary to RN1107 to RN1109

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2107

RN2108

RN2109

R1 (kΩ)

R2 (kΩ)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2107 to 2109

RN2107

Emitter-base voltage

RN2108

RN2109

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2107 to 2109

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−100

100

150

−55

to 150

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

Start of commercial production

1990-12

2014-03-01

RN2107(T5L,PP,F)相似产品对比

	RN2107(T5L,PP,F)	RN2107MFV(TPL3)	RN2109(T5L,F,T)	RN2107(T5L,F,T)	RN2109MFV(TPL3)	RN2108MFV(TPL3)	RN2107,LF(CB	RN2108(T5L,F,T)	RN2108,LF(CT	RN2109,LF(CT
描述	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	trans prebias pnp 150mw vesm	tran pnp ssm -50v -100a	tran pnp ssm -50v -100a	trans prebias pnp 150mw vesm	trans prebias pnp 150mw vesm	TRANS PREBIAS PNP 50V 0.1W SSM	TRANS PREBIAS PNP 0.1W SSM	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
Reach Compliance Code	unknown	unknow	-	-	unknown	unknown	-	-	unknown	unknown

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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