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RN1412TE85LF

产品描述transistor npn S-mini
产品类别半导体    分立半导体   
文件大小274KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准  
下载文档 详细参数 选型对比 全文预览

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RN1412TE85LF概述

transistor npn S-mini

RN1412TE85LF规格参数

参数名称属性值
Datasheets
RN14(12,13)
Product Photos
SOT-23-3
Standard Package1
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
系列
Packaging
Cut Tape (CT)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22k
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transiti250MHz
Power - Max200mW
Mounting TypeSurface Mou
封装 / 箱体
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device PackageS-Mini
Dynamic CatalogNPN Pre-biased Transistors
Other NamesRN1412TE85LFCT

文档预览

下载PDF文档
RN1412,RN1413
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1412, RN1413
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplified circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2412, RN2413
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
50
50
5
100
200
150
−55
to 125
Unit
V
V
V
mA
mW
°C
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1412
RN1413
Symbol
I
CBO
I
EBO
h
FE (note)
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
Test Condition
V
CB
= 50 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 5 V, I
C
= 1 mA
I
C
= 5 mA, I
B
= 0.25 mA
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
120
15.4
32.9
Typ.
0.1
250
3
22
47
Max
100
100
700
0.3
6
28.6
61.1
V
MHz
pF
Unit
nA
nA
Start of commercial production
1994-01
1
2014-03-01

RN1412TE85LF相似产品对比

RN1412TE85LF RN1413(TE85L,F) RN1412(TE85L,F)
描述 transistor npn S-mini TRANS PREBIAS NPN 0.2W SMINI Small Signal Bipolar Transistor
Reach Compliance Code - unknown unknown

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