电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RN1412(TE85L,F)

产品描述Small Signal Bipolar Transistor
产品类别分立半导体    晶体管   
文件大小274KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

RN1412(TE85L,F)概述

Small Signal Bipolar Transistor

RN1412(TE85L,F)规格参数

参数名称属性值
包装说明,
Reach Compliance Codeunknown
Base Number Matches1

文档预览

下载PDF文档
RN1412,RN1413
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1412, RN1413
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplified circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2412, RN2413
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
50
50
5
100
200
150
−55
to 125
Unit
V
V
V
mA
mW
°C
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1412
RN1413
Symbol
I
CBO
I
EBO
h
FE (note)
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
Test Condition
V
CB
= 50 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 5 V, I
C
= 1 mA
I
C
= 5 mA, I
B
= 0.25 mA
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
120
15.4
32.9
Typ.
0.1
250
3
22
47
Max
100
100
700
0.3
6
28.6
61.1
V
MHz
pF
Unit
nA
nA
Start of commercial production
1994-01
1
2014-03-01

RN1412(TE85L,F)相似产品对比

RN1412(TE85L,F) RN1412TE85LF RN1413(TE85L,F)
描述 Small Signal Bipolar Transistor transistor npn S-mini TRANS PREBIAS NPN 0.2W SMINI
Reach Compliance Code unknown - unknown

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1093  830  1854  1813  64  22  17  38  37  2 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved