SML9030–220M
MECHANICAL DATA
Dimensions in mm (inches)
4.70
5.00
0.70
0.90
3.56
Dia.
3.81
10.41
10.92
10.41
10.67
P–CHANNEL
MOS
TRANSISTOR
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• P CHANNEL
• REPETITIVE AVALANCHE RATED
0.89
1.14
1 2 3
–50V
13.2A
0.15
W
16.38
16.89
13.39
13.64
12.70
19.05
• DYNAMIC dv/dt RATING
• FAST SWITCHING
• EASE OF PARALLELING
• SIMPLE DRIVE REQUIREMENTS
2.54
BSC
2.65
2.75
TO–220 – Metal Package
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
T
STG
R
q
JC
R
q
JA
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
(V
GS
= -10V , T
case
= 25°C)
(V
GS
= -10V , T
case
= 100°C)
±20V
13.2A
8.3A
53A
45W
0.36W/°C
–55 to +150°C
–55 to +150°C
2.8°C/W
80°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 3/97
SML9030–220M
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= -1mA
V
GS
= -10V
V
DS
= V
GS
V
DS
= -40V
V
DS
= -60V
V
DS
= -48V
V
GS
= -20V
V
GS
= 20V
V
GS
= 0
V
DS
= -25V
f = 1MHz
I
D
= 13.2A
V
DS
= -48V
V
GS
= -10V
V
DD
= -30V
I
D
= 13.2A
R
G
= 12
W
R
D
= 1.5
W
I
D
= 9.3A
I
D
= -250
m
A
I
D
= 9.3A
V
GS
= 0
V
GS
= 0
T
J
= 125°C
I
D
= -250
m
A
Min.
-50
Typ.
Max.
Unit
V
D
BV
DSS
Temperature Coefficient of
D
T
J
Breakdown Voltage
R
DS(on)
Static Drain – Source On Resistance
1
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
1
Rise Time
1
Turn–Off Delay Time
1
Fall Time
1
Reference to 25°C
-0.060
0.15
-2
3.1
-100
-500
-100
100
900
570
140
39
10
15
18
170
32
96
13.2
53
-4
V / °C
W
V
S
m
A
nA
pF
nC
nS
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current (Body Diode)
Pulse Source Current
2
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
1
I
S
= -18A
V
GS
= 0
I
F
= -18A
d
i
/ d
t
=
100A/
m
s
T
J
= 25°C
120
0.47
4.5
7.5
T
J
= 25°C
A
V
ns
-6.3
250
1.1
m
C
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(from 6mm down lead to centre of drain bond pad)
Internal Source Inductance
(from 6mm down lead to centre of source bond pad)
nH
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 3/97
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