VSKCS403/100
Vishay High Power Products
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 400 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL pending
• Compliant to RoHS directive 2002/95/EC
ADD-A-PAK
• Designed and qualified for industrial level
BENEFITS
PRODUCT SUMMARY
I
F(AV)
400 A
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
ELECTRICAL DESCRIPTION
The VSKCS403.. Schottky rectifier common cathode has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
200 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
400
100
25 500
0.83
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VSKCS403/100
100
UNITS
V
Document Number: 94636
Revision: 05-Aug-09
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
VSKCS403/100
Vishay High Power Products
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 400 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
per module
per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 111 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 5.5 A, L = 1 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
400
200
25 500
3300
15
1
mJ
A
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
200 A
Maximum forward voltage drop
V
FM
400 A
200 A
400 A
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Maximum RMS insulation voltage
I
RM
C
T
L
S
dV/dt
V
INS
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
VALUES
0.99
1.3
0.83
1.09
6
80
5500
5.0
10 000
3000 (1 min)
3600 (1 s)
mA
pF
nH
V/µs
V
V
UNITS
T
J
= 125 °C
V
R
= Rated V
R
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
50 Hz
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
Approximate weight
to heatsink
Mounting torque ± 10 %
busbar
Case style
A mounting compound is recommended and the torque
should be rechecked after a period of 3 h to allow for the
spread of the compound.
JEDEC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
TEST CONDITIONS
VALUES
- 55 to 175
0.26
°C/W
0.1
75
2.7
4
Nm
3
TO-240AA compatible
g
oz.
UNITS
°C
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2
For technical questions, contact:
indmodules@vishay.com
Document Number: 94636
Revision: 05-Aug-09
VSKCS403/100
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 400 A
1000
Vishay High Power Products
10
00
10
0
T =1 5 C
7°
J
1 0C
5°
1 5C
2°
Reverse Current - I
R
(mA)
1
0
1 0C
0°
1
.1
.0
1
.0 1
0
0
7°
5C
5°
0C
2°
5C
Instantaneous Forward Current - I
F
(A)
100
2
0
4
0
6
0
8
0
10
0
Reverse Voltage - V
R
(V)
Tj = 175°C
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
Tj = 125°C
Tj = 25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - V
FM
(V)
Junction Capacitance - C
T
(pF)
10
Tj = 25°C
1000
0 10 20 30 40 50 60 70 80 90 100
Reverse Voltage - V
R
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
0.1
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.01
Single Pulse
(Thermal Resistance)
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94636
Revision: 05-Aug-09
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
VSKCS403/100
Vishay High Power Products
200
Allowable Case Temperature (°C)
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 400 A
300
180°
120°
90°
60°
30°
Average Power Loss - (Watts)
Square wave (D=0.50)
80% rated Vr applied
250
200
150
100
50
0
150
DC
RMS Limit
DC
100
50
see note (1)
0
0
100
200
300
400
500
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
100000
0
50
100
150
200
250
300
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
FSM
(A)
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following Surge
10000
1000
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
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For technical questions, contact:
indmodules@vishay.com
Document Number: 94636
Revision: 05-Aug-09
VSKCS403/100
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 400 A
ORDERING INFORMATION TABLE
Vishay High Power Products
Device code
VS
1
KC
2
S
3
40
4
3
5
/
100
6
1
2
3
4
5
6
-
-
-
-
-
-
Vishay HPP
Circuit configuration:
KC = ADD-A-PAK - 2 diodes/common cathode
S = Schottky diode
Average rating (x 10)
Product silicon identification
Voltage rating (100 = 100 V)
CIRCUIT CONFIGURATION
(1)
+
(2)
-
(3)
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95369
Document Number: 94636
Revision: 05-Aug-09
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
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